Temperature (K) 500 1016 333 250 200 1014 Germanium 1012 1010 108 Silicon 106 B (K-3. cm “)| Eg(eV) 104 Gallium arsenide 1.08 × 1031 Si 1.12 102 2.31 X 1030 Ge 0.66 GaAs 1.27 x 1029 100 2 1.42 3 4 5 Reciprocal temperature (1000/T) Figure 2.4 Intrinsic carrier density versus temperature from Eq. (2.1). Intrinsic carrier density (cm-)
Temperature (K) 500 1016 333 250 200 1014 Germanium 1012 1010 108 Silicon 106 B (K-3. cm “)| Eg(eV) 104 Gallium arsenide 1.08 × 1031 Si 1.12 102 2.31 X 1030 Ge 0.66 GaAs 1.27 x 1029 100 2 1.42 3 4 5 Reciprocal temperature (1000/T) Figure 2.4 Intrinsic carrier density versus temperature from Eq. (2.1). Intrinsic carrier density (cm-)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Calculate the intrinsic carrier densities in silicon and germanium at (a) 77K, (b) 300K, and (c) 450K. Use the information from the table shown.

Transcribed Image Text:Temperature (K)
500
1016
333
250
200
1014
Germanium
1012
1010
108
Silicon
106
B (K-3. cm “)| Eg(eV)
104
Gallium arsenide
1.08 × 1031
Si
1.12
102
2.31 X 1030
Ge
0.66
GaAs 1.27 x 1029
100
2
1.42
3
4
5
Reciprocal temperature (1000/T)
Figure 2.4 Intrinsic carrier density versus temperature from Eq. (2.1).
Intrinsic carrier density (cm-)
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