(ii) Consider the semiconductors Ge (Eg = 0.7 eV) and GaAs (Eg = 1.4 eV) and assume that the same values of No and N, will hold as for Si (not really true !). Calculate approximate values for n; for these two semiconductors at temperatures of 80 K, 300 K and 400 K and compare to the values obtained %3D for Si at these temperatures. Also calculate the expected electrical conductivity of each of the three semiconductors at 300 K. Calculated values for ni and o: Semiconductor N; at 80 K Nj at 300K N¡ at 400 K o at 300 K Si Ge GaAs

(ii) Consider the semiconductors Ge (Eg = 0.7 eV) and GaAs (Eg = 1.4 eV) and assume that the same values of No and N, will hold as for Si (not really true !). Calculate approximate values for n; for these two semiconductors at temperatures of 80 K, 300 K and 400 K and compare to the values obtained %3D for Si at these temperatures. Also calculate the expected electrical conductivity of each of the three semiconductors at 300 K. Calculated values for ni and o: Semiconductor N; at 80 K Nj at 300K N¡ at 400 K o at 300 K Si Ge GaAs

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Photoelectric

The photoelectric effect occurs when light (or similar incident radiation, including X-rays) falls on material together with a metal plate and causes it to emit electrons. The discovery of the photoelectric effect led to important new theories (and to a Nobel Prize for Albert Einstein). Photoelectric cells, or photocells, are utilized in burglar-alarm light detectors and garage-door openers (each employs a through-beam of light this is broken when something movements throughout it), and also to play soundtracks on film movies (in which a light beam shines through the soundtrack encoded at the film and is "read" with the aid of the photocells).

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question in photo plz

(ii) Consider the semiconductors Ge (Eg = 0.7 eV) and GaAs (Eg = 1.4 eV) and assume that the same
%3D
values of N. and N, will hold as for Si (not really true !). Calculate approximate values for n for these
two semiconductors at temperatures of 80 K, 300 K and 400 K and compare to the values obtained
for Si at these temperatures. Also calculate the expected electrical conductivity of each of the three
semiconductors at 300 K.
Calculated values for n¡ and o:
Semiconductor
N¡ at 80 K
N¡ at 300K
N¡ at 400 K
o at 300 K
Si
Ge
GaAs

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