(ii) Consider the semiconductors Ge (Eg = 0.7 eV) and GaAs (Eg = 1.4 eV) and assume that the same values of No and N, will hold as for Si (not really true !). Calculate approximate values for n; for these two semiconductors at temperatures of 80 K, 300 K and 400 K and compare to the values obtained %3D for Si at these temperatures. Also calculate the expected electrical conductivity of each of the three semiconductors at 300 K. Calculated values for ni and o: Semiconductor N; at 80 K Nj at 300K N¡ at 400 K o at 300 K Si Ge GaAs

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(ii) Consider the semiconductors Ge (Eg = 0.7 eV) and GaAs (Eg = 1.4 eV) and assume that the same
%3D
values of N. and N, will hold as for Si (not really true !). Calculate approximate values for n for these
two semiconductors at temperatures of 80 K, 300 K and 400 K and compare to the values obtained
for Si at these temperatures. Also calculate the expected electrical conductivity of each of the three
semiconductors at 300 K.
Calculated values for n¡ and o:
Semiconductor
N¡ at 80 K
N¡ at 300K
N¡ at 400 K
o at 300 K
Si
Ge
GaAs
Transcribed Image Text:(ii) Consider the semiconductors Ge (Eg = 0.7 eV) and GaAs (Eg = 1.4 eV) and assume that the same %3D values of N. and N, will hold as for Si (not really true !). Calculate approximate values for n for these two semiconductors at temperatures of 80 K, 300 K and 400 K and compare to the values obtained for Si at these temperatures. Also calculate the expected electrical conductivity of each of the three semiconductors at 300 K. Calculated values for n¡ and o: Semiconductor N¡ at 80 K N¡ at 300K N¡ at 400 K o at 300 K Si Ge GaAs
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