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Semiconductor fabrication Consider a wafer of Si crystal which has a uniform boron (B) doping of 1 x 10¹7 cm³ in the bulk. Suppose that the Si wafer is exposed to a phosphorus (P) gas sion and Oxidation ( S.O. Kasap, 2021) Booklet 27 at 1250 °C for 10 minutes. During the diffusion process, the surface P concentration remains saturates at about 1 × 1021 cm³³. Where is the junction from the surface? How long does it take to have the same junction depth from the surface if the diffusion temperature is 1100 °C? State the assumptions used in your calculations. The diffusion coefficient of P in Si has Do = 3.85 cm² s¹¹, and Ed=3.66 eV/atom. Note: B doping makes Si, p-type and P-doping makes it n-type. The junction is where B and P concentrations are equal.

Semiconductor fabrication Consider a wafer of Si crystal which has a uniform boron (B) doping of 1 x 10¹7 cm³ in the bulk. Suppose that the Si wafer is exposed to a phosphorus (P) gas sion and Oxidation ( S.O. Kasap, 2021) Booklet 27 at 1250 °C for 10 minutes. During the diffusion process, the surface P concentration remains saturates at about 1 × 1021 cm³³. Where is the junction from the surface? How long does it take to have the same junction depth from the surface if the diffusion temperature is 1100 °C? State the assumptions used in your calculations. The diffusion coefficient of P in Si has Do = 3.85 cm² s¹¹, and Ed=3.66 eV/atom. Note: B doping makes Si, p-type and P-doping makes it n-type. The junction is where B and P concentrations are equal.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Semiconductor fabrication Consider a wafer of Si crystal which has a uniform boron (B) doping of 1 x 10'7 cm³ in the bulk. Suppose that the Si wafer is exposed to a phosphorus (P) gas sion and Oxidation (© S.O. Kasap, 2021) Booklet 27 at 1250 °C for 10 minutes. During the diffusion process, the surface P concentration remains saturates at about 1 × 1021 cm³. Where is the junction from the surface? How long does it take to have the same junction depth from the surface if the diffusion temperature is 1100 °C? State the assumptions used in your calculations. The diffusion coefficient of P in Si has Do= 3.85 cm² s', and Ea= 3.66 eV/atom. Note: B doping makes Si, p-type and P-doping makes it n-type. The junction is where B and P concentrations are equal.
Transcribed Image Text:Semiconductor fabrication Consider a wafer of Si crystal which has a uniform boron (B) doping of 1 x 10'7 cm³ in the bulk. Suppose that the Si wafer is exposed to a phosphorus (P) gas sion and Oxidation (© S.O. Kasap, 2021) Booklet 27 at 1250 °C for 10 minutes. During the diffusion process, the surface P concentration remains saturates at about 1 × 1021 cm³. Where is the junction from the surface? How long does it take to have the same junction depth from the surface if the diffusion temperature is 1100 °C? State the assumptions used in your calculations. The diffusion coefficient of P in Si has Do= 3.85 cm² s', and Ea= 3.66 eV/atom. Note: B doping makes Si, p-type and P-doping makes it n-type. The junction is where B and P concentrations are equal.
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