ipVDDVDDRDRDVDS (sat) VGS-VTN-Transition pointVDD VDSFigure 16.3 (a) NMOS inverter with resistor load and (b) transistor characteristics and load line EXERCISE PROBLEMEx 16.1: Consider the NMOS inverter with resistor load in Figure 16.3(a) biased atVDD = 3 V. Assume transistor parameters of k = 100 μA/V², W/L = 4, andVTN = 0.5 V. (a) Find the value of RD such that vo = 0.1 V when v₁ = 3 V.(b) Using the results of part (a), determine the maximum current and maximumpower dissipation in the inverter. (c) Using the results of part (a), determine thetransition point for the driver transistor. (Ans. (a) R₁ = 29.6 ks; (b) iD,max =0.098 mA, PD,max = 0.294 mW; (c) V₁₁ = 1.132 V, Vot = 0.632 V)

Step 1: Step 2: Step 3: Step 4:

Answered: ip VDD VDD RD RD VDS (sat) VGS-VTN…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Draw and label the cross section of a CMOS inverter (NOT gate). Draw the transistor schematic (circuit diagram) of the inverter. Show the transfer characteristics (Vi versus Vo).
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1) a) Design a depletion-mode load inverter shown in the below figure with Vpp = 3.3V, P = 0.25mW, VL = 0.2V, VTo = 0.6V for the switching transistor, VTo = -3V for the depletion- mode load, y = 0.5VV, and 2șF = 0.6V. b) What are the vlues of NML and NMµ? ML 0a 어 Ms
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1. For the enhancement nMOSFET inverter circuit, Vt = .84 V, ip = 1.6 mA, vgs = 1.3 V, VDs = 5 V. VDD RD UIN iD VOUT (a) Find k. (b) Specify an appropriate value of VDD and R. Choose the nearest standard value of resistor. (c) What is the lowest possible value of VDD? (d) Show that the transistor is in saturation mode. (e) How much power is being dissipated by the entire circuit?
Problem 3 Consider a CMOS static inverter. Please be careful with units. The NMOS transistor has the following characteristics. The channel length is 350 nanometers. For NMOS: tox=10nm, Vm=0.25V, un=560cm²/vsec, W=700nm, L=350nm For PMOS: tox=10nm, Vtp=-0.35V, up=240cm²/vsec, W=700nm, L=350nm Compute the resistance R₁ for NMOS if the power supply voltage (Vad) is 1.25 volts.
Redesign the resistive load inverter for operation at a power level of 0.30 mW withVDD = 3.3 V. Assume VT O = 0.7 V. Keep theother design parameters the same. What is the newsize of MS and the value of R? (b) What are thevalues for NMH and NML ?
None
Q5 Consider a four-input CMOS NAND logic gate. Draw the circuit, then: Q6 a) Determine the W/L ratios of the transistors to provide for symmetrical switching based blcon the CMOS inverter design with (W/L) 2 and (W/L), 4. b) If the load capacitance of the NOR gate becomes 5 times the original value, determine the required W/L ratios to provide the same switching speed as the logic gate in part (a). Design a CMOS circuit to implement the logic function. The design should not include a CMOS inverter at the output. F= ABC + ACD + ACD
1. The inverter in Figure 1 utilizes an N-channel enhancement-mode MOSFET with the parameters Kn = 1 mA/V2 and VTN = 2 V. Find the inverter output at Vout when Vin = 3 V and Vin = 4 V. Plot the Vin-Vout transfer characteristics of the inverter. VDD=7.5V RD 5000 in oVout VTN=2.0 V Kn=1 mA/V2 Vin Equations for calculations related to N-channel MOSFET are given below. Figure 1 ip = Kn(VGS - VTN)² (in SAT region), ip = Kn[2(VGs - VTn)VDs - Vos] (in non-SAT region), Vpssat = VGS - VTN (non-SAT to SAT transition threshold)

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