Diodes in Series and ParallelDiodes in Series⚫ For the circuit in Figure 16, calculate Vout and R₁. Given: ILED=20mA, Supply+=9.0V, VLED=2.0V.Vout=R1=• Repeat the calculation for Vout and R₁. Given: ILED=20mA, Supply+=9.0V, VLED=3.0V.Vout=R₁=Supply+GNDR1LEDLEDFigure 16:LED Circuit+Vauc

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Answered: Diodes in Series and Parallel Diodes in…

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter30: Dc Motors

Section: Chapter Questions

Problem 6RQ: What is CEMF?

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What is CEMF?
points) For the circuit shown below, sketch to scale the output V, waveform and draw the transfer characteristic (V. versus Vi), Assume the diodes are ideal. V₁ =15-sin wt Zloks www loks # HIF 4V + Vo
Please find the correct answer by solving the problem
For the circuit shown in the Figure, if the diodes are silicon diodes with Vp(on)=0.7 V, and VIN=50 sin wt V, V1 =6 V and V2 = 16 V, then the value of VouTP-p) is: R, D VaN Vout v1事 2章 Oa. 25.4 V Ob. 27.4 V Oc. 29.4 V Od. 23.4 V
consider the figure below that shows an approximated reverse recovery turn-off characteristics for a power diode. Show that the following relation can express the total reverse recovery charge, Qrr = 1/2(trr*ts1) di1/dt =1/2(trr*ts21) di2/dt * ip Isl 1s2! -Ir
4.) In which mode will a diode generally not conduct electricity? a. Bidirectional Biased b. None of these c. Forward Biased d. Reversed Biased 5.) Consider the following schematic symbol of a semiconductor device: Which side is the Cathode? (Picture inserted down below) a. Side A b. Both side A and B c. Side B d. Neither side A or B 8.) Integrated circuits can be broken down into three basic categories. Which category does an operational amplifier (or op-amp) fall into? a. Analog b. None of these c. A combination of analog and digital d. Digital
Consider the Zener diode circuit shown in Figure. The Zener Breakdown Voltage (Vz) is 5.6 V at Iz= 0.1mA. Zener resistance is r,= 10 0. What is Vo without load (RL= ∞) ? R= 0.5 kQ Vo Vps= 10 V
3. An SCR differs from the Shockley diode because a. it has a gate terminal b. it is not a thyristor c. it does not have four layers d. it cannot be turned on and off 4. A Shockley diode turns on when the anode to cathode voltage a. exceeds 0.7 V b. exceeds the gate voltage c. exceeds the forward-breakover voltage d. exceeds the forward-blocking voltage 5. Once it is conduction, a Shockley diode can be turned off by a. reducing the current below a certain value b. disconnecting the anode voltage c. a and b d. none of these
Consider a silicon pn junction diode at T 300K. The reverse saturation current is Is = 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.573 V and use that to determine the DC and AC resistance of the diode. RDC = 14.13 k rac = 639 Q RDC = 234 Q2 = rac=8Q RDC = 7.00 KQ rac = 307 Q RDC = 1.43 kQ rac = 58 Q
Q1/Consider the circuit in Figure with a transformer of 10:1 transformation ratio and the diodes are silicon. a) What type of circuit is this? (b) What is the total peak secondary voltage? (c) Find the voltage value across the resistor (d) Sketch the voltage waveform across RL (e) What is the PIV for each diode? D3 D 120 V Pisez) Vpouo D D 10 kn lleee
(b) Measure (using the DVM and oscilloscope) the voltage drop Vc across the capacitor and explain the operation of the circuit. the voltage drop Vc across the capacitor is 4.61V please explain question b
What will be the value of the reverse saturation current for a Si diode operating in forward bias mode. The following information is given: Diode current 3 A Voltage across diode 0.25 V. Temperature is 300 K.

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