Problem 2 The total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. Assume electron concentration is constant and is equal to 10¹6 cm³. The hole concentration as a function of x is given as: p(x) = 1015 expcm Let L = 12 μm. The hole diffusion coefficient is Dp = 12 cm²/s. The electron mobility, un = 1000 cm²/V.s. The total current density, J = 4.8 Acm². Calculate: A. The hole diffusion current density vs x. B. The electron current density vs X C. The electric field vs x.

Problem 2 The total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. Assume electron concentration is constant and is equal to 10¹6 cm³. The hole concentration as a function of x is given as: p(x) = 1015 expcm Let L = 12 μm. The hole diffusion coefficient is Dp = 12 cm²/s. The electron mobility, un = 1000 cm²/V.s. The total current density, J = 4.8 Acm². Calculate: A. The hole diffusion current density vs x. B. The electron current density vs X C. The electric field vs x.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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