gn the BJT amplifier circuit shown below to have a (A, = -5), (Zin = 2.5 kN), = 2 kN), (Z' = 1.8 kN). /noe ), (hie = 1.2 kN) = 00 . = me that the transistor is silicon with, (B = 80) (ro R2 = 5 kN). Vcc + 20V R Z. Cs Z. Z; Z, R$ Z RE
gn the BJT amplifier circuit shown below to have a (A, = -5), (Zin = 2.5 kN), = 2 kN), (Z' = 1.8 kN). /noe ), (hie = 1.2 kN) = 00 . = me that the transistor is silicon with, (B = 80) (ro R2 = 5 kN). Vcc + 20V R Z. Cs Z. Z; Z, R$ Z RE
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Design the BJT amplifier circuit shown below to have a (?? = −5), (??? = 2.5 ?Ω), (? =2?Ω),(?′ = 1.8kΩ).
??
1
Assume that the transistor is silicon with, (? = 80) (? = ⁄ = ∞ ), (h = 1.2 ?Ω)
and (?2
= 5 kΩ).
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