gn the BJT amplifier circuit shown below to have a (A, = -5), (Zin = 2.5 kN), = 2 kN), (Z' = 1.8 kN). /noe ), (hie = 1.2 kN) = 00 . = me that the transistor is silicon with, (B = 80) (ro R2 = 5 kN). Vcc + 20V R Z. Cs Z. Z; Z, R$ Z RE

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Design the BJT amplifier circuit shown below to have a (?? = −5), (??? = 2.5 ?Ω), (? =2?Ω),(?′ = 1.8kΩ). ?? 1 Assume that the transistor is silicon with, (? = 80) (? = ⁄ = ∞ ), (h = 1.2 ?Ω) and (?2 = 5 kΩ).
Design the BJT amplifier circuit shown below to have a (A, = -5), (Zin = 2.5 kN),
(Z, = 2 kN), (Z,
Assume that the transistor is silicon with, (ß = 80) (ro = /h.
1.8 kN).
), (hie
= 1.2 kN)
= 00
and (R2
5 kN).
Vcc + 20V
Rc
Zo
Cs
RL
Z;
Rs
Z RE
Transcribed Image Text:Design the BJT amplifier circuit shown below to have a (A, = -5), (Zin = 2.5 kN), (Z, = 2 kN), (Z, Assume that the transistor is silicon with, (ß = 80) (ro = /h. 1.8 kN). ), (hie = 1.2 kN) = 00 and (R2 5 kN). Vcc + 20V Rc Zo Cs RL Z; Rs Z RE
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