By inspection, the gain of the circuit shown below is expressed by (A=0): VOD I. Vout Vin M2 Select one: RD O a. 1 gml O b. None of these O C. gml gm2 gm3 RD Od. //ro3 gml gm3 The physical structure of the MOSFET transistor is symmetric such that we can not discriminate the drain and the source Select one: O True O False The majority charge carrier in the channel of the NMOS is the electrons Select one: O True O False

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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By inspection, the gain of the circuit shown below is expressed by (A=0):
VDD
I.
RD
oVout
VinHEM,
EM,
M2
Select one:
RD
O a.
1
1
+(
//
gml
gm2
gm3
O b. None of these
C.
gm1
gm2
gm3
RD
1
m3 //ro3
d.
gml
The physical structure of the MOSFET transistor is symmetric such that we can not discriminate the drain and the source
Select one:
O True
O False
The majority charge carrier in the channel of the NMOS is the electrons
Select one:
O True
O False
Transcribed Image Text:By inspection, the gain of the circuit shown below is expressed by (A=0): VDD I. RD oVout VinHEM, EM, M2 Select one: RD O a. 1 1 +( // gml gm2 gm3 O b. None of these C. gm1 gm2 gm3 RD 1 m3 //ro3 d. gml The physical structure of the MOSFET transistor is symmetric such that we can not discriminate the drain and the source Select one: O True O False The majority charge carrier in the channel of the NMOS is the electrons Select one: O True O False
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