PART B3. You are required to design a Common Emitter Amplifier with Voltage Divider Bias configuration ofFigure 3 below. Give some justification on your design configuration.R, {Rc {VRC2N2222+R2RE EVEFigure 3Given that Vcc = 24 V, Ico = 5 mA and Vg = 0.1 Vcc. The intended Q-point value should be located at thecentre on the DC load line (VCEQ = 1/2Vcc). The average B for 2N2222 transistor will be assumed to be135. Assume 1OR2 = BRgand Vhevenin = VB. Determine the resistor values that will produce the intendedQ-point.To test the design, simulate your design using Multisim.ww

Answered: Image /qna-images/answer/be530091-6df3-4ea4-8061-fc1e4c47ed44.jpg

Answered: You are required to design a Common…

You are required to design a Common Emitter Amplifier with Voltage Divider Bias configuration of Figure 3 below. Give some justification on your design configuration.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Related questions

Q: These are all about Bipolar Junction Transistors: How do you ensure that a BJT is in saturation?…

A: (1) Condition for BJT is in saturation :- A BJT i said to be operated in saturation region if…

Q: 4 For the transistor shown in below figure, Calculate the value of R, that will just make the…

A: Vcc-icRc=Vc

Q: Draw the circuit diagram of two quadrant chopper designed by transistor which has the average…

A: The two-quadrant chopper topology includes two controllable semiconductor devices (transistors) with…

Q: OR e) Describe the working principle of SF6 circuit breaker and discuss the advantages and…

A: SF6 is gas which is compressed and filled in a tank. Whenever there is a fault conditions, the…

Q: Electronic 2 : For the network in the figure: a) Obtain the necessary equation for IB Base current…

A: Solution - (a) The given circuit is shown below,

Q: How to calculate the bias resistor of a common emitter amplifier. The design curretn is 0.55mA. Bera…

A: In the given questions we need to design the amplifier circuit based on the given specifications.

Q: This is about the integrated fabrication process for microelectronic devices for a bipolar n-p-n…

A: According to the question, we need to explain the fabrication process flow for a bipolar n-p-n…

Q: The small-signal model is said to be valid for voltage variations of about 5 mV. To what percentage…

A: Assume value on n =1& 2

Q: Cite the similarities of common-emitter, common-base and common-collector configurations

A: The circuit of common-emitter is given as- The circuit of common-base is given as- The circuit of…

Q: Activity outcome: -Use simulation tools (virtual-experiment) to perform analysis on related…

A: Solution Part 1 : VB = V x R2R1+R2 , R1∥R2 = R1xR2R1+R2 =Rth So equivalent circuit IB =…

Q: P-channel MOSFET is basically a following device. a.voltage operated b.power operated…

A: We need to select correct option for given statement

Q: Explain the reasons why we need Common Collector Circuits ?

A: To Explain the reasons why we need Common Collector Circuits

Q: The maximum permissible junction tem- perature of a certain power transistor is 150°C. It is desired…

Q: Q6: Design a boost converter to provide an output voltage of 36V from a 24V source. The load is 50W.…

A: (a) Consider the formula for the output voltage as, Vout=Vin1-D Solve as,…

Q: 1 The AC input to a common emitter amplifier (Figure 1) is such that it is comparable to thermal…

Q: is problem is AC analysis problem. DC analysis is not needed to answer the question. A) Convert this…

A: We need to draw complete circuit for bypass comman emitter Amplifier , we also need to draw small…

Q: Write down which transistor structure each curve characteristic belongs to.

A: From the question Graph We see that three Graph is various type of Junction field effect transistor

Q: With Neat sketch explain the construction, operation, VI characteristics, application and features…

A: IGBT (Insulated Gate Bipolar Transistor) is the power electronic device which is having low on state…

Q: R1 R3 Vs Vout R2 Vin Figure 2.2 (c) What is the small-signal output voltage, vout, for the circuit…

A: We need to find out output voltage for given circuit.

Q: Show how using p-n-p transistor connected in common-emitter configuration it can be used as an…

A: The Common-Emitter transistor configuration is used as a amplifier in applications like Audio…

Q: input B A

A: Given A circuit for a pulse width modulation (PWM) amplifier. Describe How the circuit achieves…

Q: For the common emitter configuration, the current amplification factor (B) is 90. What will be the…

Q: circuit diagram with a load ,for the Power MOSFET

A: Mosfet is a voltage controlled Device on which pulse switching frequency and their magnitude decide…

Q: Consider the following common emitter amplifier: Discuss the LIMITATIONS of this circuit in terms…

A: We need to discuss the limitation of this circuit in terms of linearity and in terms of impedance…

Q: Design a Common Emitter Voltage Divider Bias Amplifier circuit using. The current gain of the…

A: Given values, Supply voltage, VCC= 18 V Collector current, ICQ= 10 Ma Current gain, β= 75 collector…

Q: IDSS=8mA , VP =-4V To help plot the DC load line VGS=VG-IDRS a)Attach a Plot of JFET Characteristic…

A: The required parameters can be calculated by using DC analysis of FET amplifier circuit.

Q: The n-channel enhancement-mode MOSFET of Figure below

Q: (1) Using a common-emitter transistor configuration circuit discuss une Imput, output and transfer…

Q: draw the following systems: 1-AM generation -Square law product. 2- PM generation- frequency…

Q: the diagram on the right is for a register bank circuit that contain 8 registers. Each register is…

Q: 2. Provide a practical example where E-MOSFET and D-MOSFET are used together, explain how how it…

A: E-MOSFET - It is also known as enhancement MOSFET. In E-MOSFET, the channel is enhanced by the gate…

Q: Consider one Design or applications of MOSFET (can be as a small signal amplifier and digital…

A: MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. MOSFET is a voltage controlled…

Q: In a full-bridge dc-dc converter using PWM bipolar voltage switching, analytically obtain the value…

A: Here, In a full-bridge dc-dc converter using PWM bipolar voltage switching, we have to determine the…

Concept explainers

Power Amplifier

The power amplifier is an electronic amplifier designed to maximize the signal strength of a given input. The input signal strength is enhanced to a high enough level to drive output devices such as speakers, headphones, RF (Radio frequency) transmitters, etc. Unlike voltage / current amplifiers, the power amplifier is designed to drive core loads directly and is used as a storage block in the amplifier series.

Maximum Efficiency Criterion

In every field of engineering, there is a tremendous use of the machine and all those machines are equipped for their popular work efficiency so it very much important for operation engineers to monitor the efficiency of the machine, planning engineers to check out the efficiency of the machine before installing the machine and design engineers to design machine for higher efficiency than and then the utility will procure their products that will ultimately lead to profit and loss of the company. It indicates the importance of efficiency right from the initial stage as manufacturing units, intermediate stage as planning coordinators, and end-users stage as a utility.

Question

PART B
3. You are required to design a Common Emitter Amplifier with Voltage Divider Bias configuration of
Figure 3 below. Give some justification on your design configuration.
R, {
Rc {
VRC
2N2222
+
R2
RE E
VE
Figure 3
Given that Vcc = 24 V, Ico = 5 mA and Vg = 0.1 Vcc. The intended Q-point value should be located at the
centre on the DC load line (VCEQ = 1/2Vcc). The average B for 2N2222 transistor will be assumed to be
135. Assume 1OR2 = BRgand Vhevenin = VB. Determine the resistor values that will produce the intended
Q-point.
To test the design, simulate your design using Multisim.
ww

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step 3

VIEW

Step by step

Solved in 3 steps with 5 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

explain with diagram or circuit
What are the transistor fabrication techniques, process of fabrication, structure.
Subject:Electronics Engineering With a neat circuit diagram, explain the Voltage Divider Bias circuit using approximate analysis. Also derive the equation of stability (S) for Voltage Divider Bias circuit.
Q3 Figure 3 shows the electric scheme of a specific current mirror circuit. (a) Which configuration of current mirror circuit is it? Determine the output resistance Rout of circuit in Figure 3. Show the details of calculation and state any assumption. (b) What is the main advantage of using a cascade current mirror over a simple current mirror made by only two transistors? (c) Iout M3 M2 M4 Vss =0 V Figure 3
Q1) Determine whether the transistor in figure(1) is in saturation or not. Assume Veran 0.2 V.
Q2. a) In a Bipolar Transistor define the quantity a or hFB. How is the device structure of the npn Bipolar Transistor designed to maximize this quantity?
Discuss the significant different between the construction of an E-MOSFET and a D-MOSFET.
what is the major difference of flyback converter as compared to basic dc-dc converter (for example Boost converter) in term of circuit construction and operation.
Q4. For the circuit shown in Figure Q4: i) What is the type of MOSFET and the amplifier configuration? ii) Find the Q-point (Ip and Vps) iii) What is the device transconductance, gm? iv) What are the voltage gain and output voltage? v) Draw the input /output voltage waveforms showing the phase relationship between them. Be sure to label them properly. +20V IDON = 15 mA@ VcsON = 6V VGSTH = 1V 1kQ Rp C2 10M2 Ro1 out Vin 3.3MQ Ra, 47003 Rs 50mV Figure Q4
"Bias voltage applied to the emitter electrode of a transistor offers greater stability over bias toward its base." Why? How does that actually work? My professor wants a detailed, engineering level explanation for this, and I am struggling to understand this to the degree he is asking. He says having both a positive and negative voltage source at the emitter bias is not necessary, and won't accept this as part of the explanation. Thanks!
What is the characteristics/behavior of common collector configuration in Darlington Pair?
An enhancement type N-MOSFET with VT = 2 V that conducts a current ID = 5 mA for VGS = 4 V and VDS = 5 V. What is the value of ID for VGS = 3 V and VDS = 6 V?