I need the answer as soon as possible Q.3. For the output stage shown in Figure 3, the transistors have the followingspecifications:npn T's : B = 200 &VA=120 Vpnp T's : B = 100 &VA=60 VUse | Vat| = 0.7 V and | Vors| =0.2V for all transistors(a) Draw the transfer C/Cs showing all limits for R=20 Q, R=200 2 andR =1kQ.(b)Write an expression for the output impedance15VQ2Q3Q1D1VaYD2ŽRL- ISV0415VR17.325kaQ5Q6- 1SVFigure 2

According to the question we have to draw the C/Cs showing all limits and write the expression for…

Answered: Q.3. For the output stage shown in…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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circuits by using the small signal models of the transistor. Assume the Early voltage of the transistors are infinitely large. Calculate the small-signal input and output impedances of the following Vcc R1 R1 Rout VB RE Rin R2
Fill in the table VB VC VE Ic LE I8 fre IT gm 5V Consider the circuit given at the right. 600k 1.5k =0.7, Vauo, B=165) 100uF Vo 1k 100uF a) Perform DC analysis and calculate all VB =? VC:? branch currents, node voltages, and small signal parameters 3K VE=? Rout b) Draw a small-signal equivalent model n Vin Rin 400K c) Calculate Ri, Rout, and Ay=Vou/Vin -5V
Derive the Avf, Rif, Rof, R’of for the circuit shown in figure . For each transistor the h-parameters, hie and hfe are equal.
The Input resistance (Ri) of a given Transistor is______________
Determine in which mode (depletion, enhancement or neither) each D-MOSFET in the figure below.
Sketch the de load line, quiescent collector current, quiescent voltsge, input power, output power and maximum efficiency of the circuit shown an Figure. The input results in a base current of 5 mA peak to peak What maximum output power can be delivered by the circuit, if the input voltage is changed resulting in a base current of 10mA peak to peak and hence find the maximum etficiency. cc=15 V R =18 2 -25
The DC Current Gain of a Transistor is Select one: a. Ratio of Collector Current to Base Current b. Ratio of Base Current to Collector Current c. Ratio of Emitter Current to Collector Current d. Ratio of Base Current to Emitter Current
Design-CE255/ purses / Introduction to Electronic Analysis and Design - CE255/E To use it as an amplifier Select one: a. The MOSFET should in the triode region b. The MOSFET should be in the cutoff region c. The MOSFET should be in the saturation region d. The MOSFET could be in saturation or triode region ge Esessment CE255/EE255 (O1) - Dr. Mamoun Al-Mistar Jump to...
Figure 1(a) shows a series fed class A amplifier circuit. In order to achieve the maximum efficiency, the Q point must be located at the center of the DC load line as shown in Figure 1(b). This generates the maximum output current swing of Icmax (p – p) RC and the maximum output voltage swing is VCEmax(p – p) = Vcc Assume that the maximum input de power is (1 Vcc Pimax(dc) = Vcc!cQ(max)=Vcc \2° Rc. 2Rc Find the maximum efficiency, 7 of this circuit.
Instruction/s: Draw, Illustrate and label your schematic diagram before solving the problem.2.) Given a Collector -Feedback Biased transistor circuit with voltage at common collector is +10v ,base resistor is 100k ohms, Collector resistor is 10k ohms and Base current is 8.38 micro ampere, ,Voltage at Base-emitter junction is 0.7v. Determine Beta DC , Collector current and Voltage at collector-emitter junction. These might help as a guide to answer the problem...
Determine the VDS and the drain current for the E-MOSFET circuit shown. The data sheet for this particular MOSFET gives ID(ON)=500 mA at VGS=10 V and VGS(th)=1 V.
As a maintenance engineer in a semiconductor company, you are given a task to replace the current version of dc-biasing circuit for a faulty tester machine. This dc-biasing circuit used an n-channel JFET as shown in Figure 2. Re-design a new dc-biasing circuit using an n-channel D-MOSFET that can produce a similar output current, IDQ as the previous circuit. Your tasks are: (i) Calculate the operating point (IDQ and VGSQ) of the dc-biasing circuit in Figure 2. Then sketch the JFET network transfer curve (ID and VGS). (ii) Without changing the circuit configuration, calculate the values of source resistor, RS and RB to achieve this objective. Determine the commercial value of the new RS and RB.  For cost reduction reason, the values of RD, RA and VDD should be maintained.  The chosen D-MOSFET has a maximum drain current of 8 mA and gate-source cutoff voltage of – 15V.  The new RS value should be 3 times larger than the old RS used in the JFET network to compensate for the high…

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