Z, = 2 kN), (Z, = 1.8 kN). ssume that the transistor is silicon with, (ß = 80) (ro = '/h. = 0 ), Chie = 1.2 kN) %3D = co nd (R2 = 5 kn). Vcct + 20V RC R, Z. RL Z, Cs R$ ER RE ww

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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Design the BJT amplifier circuit shown below to have a (A, = -5), (Zin = 2.5 kN),
(Z, = 2 kn), (Z, = 1.8 kN).
Assume that the transistor is silicon with, (ß = 80) (ro = '/h..
= o ), (hie = 1.2 kN)
%3D
and (R2 = 5 kN).
Vcc + 20V
RC
R
Z.
RL
Z,
Cs
Z,
R$3
ER
RE
Transcribed Image Text:Design the BJT amplifier circuit shown below to have a (A, = -5), (Zin = 2.5 kN), (Z, = 2 kn), (Z, = 1.8 kN). Assume that the transistor is silicon with, (ß = 80) (ro = '/h.. = o ), (hie = 1.2 kN) %3D and (R2 = 5 kN). Vcc + 20V RC R Z. RL Z, Cs Z, R$3 ER RE
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