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In semiconductors to maximize the the radiative recombination efficiency 1: The non-radiative recombination rate Ror should be minimized. O a. O b. Tr/Tnr should be as large as possible. O C. Tar should be very smal1 compared to Tr. O d. Tr and Tar should be equal. O e. Non of the given choices is correct.

In semiconductors to maximize the the radiative recombination efficiency 1: The non-radiative recombination rate Ror should be minimized. O a. O b. Tr/Tnr should be as large as possible. O C. Tar should be very smal1 compared to Tr. O d. Tr and Tar should be equal. O e. Non of the given choices is correct.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 х 10-34 Js 9.11 x 10-31 Kg h Si Ge Ga As mo Eg (eV) n; (cm-3) Hn (cm²/V – s) Hp (cm²/V – s) Ne (cm-3) N. (cm-3) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 8.85 x 10 1500 3900 8500 12 F/m 1.05 x 10-34 J – s 8.6 x 10-6 eV/K 26 mV (T %3D 300 К) 26 meV (T = 300 K) 3 x 10° m/s Eo 450 1900 400 2.78 x 1019 | 1.04 × 1019 4.45 x 1017 6 x 1018 K 9.84 × 1018 7.72 × 1018 KT/q m /m. m, /m. e, (F/m) 0.082 0.98 0.067 KT %3D 0.28 0.49 0.45 11.7 16 13.1 nair 1 NGAAS = 3.66 Some useful relations EGAL,Ga -z As(x) = 1.424 +1.247x Egin,Gaj -zAs(x) = 0.36+ 1.064.r 1 eV = 1.602 × 10-19 J 1 KG = 1 × 10-5 Wb/cm2 %3D
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 х 10-34 Js 9.11 x 10-31 Kg h Si Ge Ga As mo Eg (eV) n; (cm-3) Hn (cm²/V – s) Hp (cm²/V – s) Ne (cm-3) N. (cm-3) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 8.85 x 10 1500 3900 8500 12 F/m 1.05 x 10-34 J – s 8.6 x 10-6 eV/K 26 mV (T %3D 300 К) 26 meV (T = 300 K) 3 x 10° m/s Eo 450 1900 400 2.78 x 1019 | 1.04 × 1019 4.45 x 1017 6 x 1018 K 9.84 × 1018 7.72 × 1018 KT/q m /m. m, /m. e, (F/m) 0.082 0.98 0.067 KT %3D 0.28 0.49 0.45 11.7 16 13.1 nair 1 NGAAS = 3.66 Some useful relations EGAL,Ga -z As(x) = 1.424 +1.247x Egin,Gaj -zAs(x) = 0.36+ 1.064.r 1 eV = 1.602 × 10-19 J 1 KG = 1 × 10-5 Wb/cm2 %3D
In semiconductors to maximize the the radiative recombination efficiency n,: O a. The non-radiative recombination rate Ror should be minimized. O b. Tr/Tnr should be as large as possible. O c. Tnr should be very smal1 compared to Tr. O d. T and Tar should be equal O e. Non of the given choices is correct.
Transcribed Image Text:In semiconductors to maximize the the radiative recombination efficiency n,: O a. The non-radiative recombination rate Ror should be minimized. O b. Tr/Tnr should be as large as possible. O c. Tnr should be very smal1 compared to Tr. O d. T and Tar should be equal O e. Non of the given choices is correct.
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