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VBE 0.7 V Re www Rc 2 25 20 15 10 5 Vcc +11+ Ves - IsRs - VBE = 0 Rc 1k VBB - VBE = la Ra Base-bias Silicon small signal transistors typically have a ß in the range of 100-300. Complete the following table of values. Beta Vcc= VBB 100 150 200 250 300 1.2k 900 750 500 VBB - VBE RB E = (B + 1) | B = BlB Vaa - VBE RB/B le = RB 1k 500 300 450 250 (KVL) (IE base-bias) Ів IE

VBE 0.7 V Re www Rc 2 25 20 15 10 5 Vcc +11+ Ves - IsRs - VBE = 0 Rc 1k VBB - VBE = la Ra Base-bias Silicon small signal transistors typically have a ß in the range of 100-300. Complete the following table of values. Beta Vcc= VBB 100 150 200 250 300 1.2k 900 750 500 VBB - VBE RB E = (B + 1) | B = BlB Vaa - VBE RB/B le = RB 1k 500 300 450 250 (KVL) (IE base-bias) Ів IE

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Solve IB and IE
VBE = 0.7 V Ro Rc Vcc = VBB 25 20 15 10 Vcc 5 Ves - IsRs - VBE = 0 VBB Base-bias Silicon small signal transistors typically have a ß in the range of 100-300. Complete the following table of values. Beta 100 150 200 250 300 Rc 1k 1.2k 900 750 500 B = 100 = R₁ = B = 100 1 = VBE BRB Example Calculations: Assuming that we have a ß-100 transistor, what value of the base-bias resistor is required to yield an emitter current of 1mA? Solving the IE base-bias equation for RB and substituting B, VBB, VBE, and IE yield 930kn. The closest standard value is 910kn. B = 300 Vn-V₁ /B Vra-Ver R/B = VBB - VBE RB E = (B + 1) B = BlB VBB - VBE RB/B V₁ = 10V c = = 1mA RB 1k 500 300 450 250 = What is the emitter current with a 910k resistor? What is the emitter current if we randomly get a ß-300 transistor? 10-0.7 910k/300 10-0.7 1mA/100 = 930k Vi= 10V R₁ = 910k VHF = 0 7V 10 -0.7 910k/100 (KVL) (IE base-bias) = 102mA = 307mA IB The emitter current is little changed in using the standard value 910k2 resistor. However, with a change in ß from 100 to 300, the emitter current has tripled. This is not acceptable in a power amplifier if we expect the collector voltage to swing from near VCC to near ground. However, for low level signals from micro-volts to about a volt. the bias point can be centered for a ß of the square root of (100-300)=173. The bias point will still drift by a considerable amount. However. low-level signals will not be clipped. Base-bias is not suitable for high emitter currents, as used in power amplifiers. The base-biased emitter current is not temperature stable. Thermal runaway is the result of high emitter current causing a temperature increase which causes an increase in emitter current, which further increases temperature. IE
Transcribed Image Text:VBE = 0.7 V Ro Rc Vcc = VBB 25 20 15 10 Vcc 5 Ves - IsRs - VBE = 0 VBB Base-bias Silicon small signal transistors typically have a ß in the range of 100-300. Complete the following table of values. Beta 100 150 200 250 300 Rc 1k 1.2k 900 750 500 B = 100 = R₁ = B = 100 1 = VBE BRB Example Calculations: Assuming that we have a ß-100 transistor, what value of the base-bias resistor is required to yield an emitter current of 1mA? Solving the IE base-bias equation for RB and substituting B, VBB, VBE, and IE yield 930kn. The closest standard value is 910kn. B = 300 Vn-V₁ /B Vra-Ver R/B = VBB - VBE RB E = (B + 1) B = BlB VBB - VBE RB/B V₁ = 10V c = = 1mA RB 1k 500 300 450 250 = What is the emitter current with a 910k resistor? What is the emitter current if we randomly get a ß-300 transistor? 10-0.7 910k/300 10-0.7 1mA/100 = 930k Vi= 10V R₁ = 910k VHF = 0 7V 10 -0.7 910k/100 (KVL) (IE base-bias) = 102mA = 307mA IB The emitter current is little changed in using the standard value 910k2 resistor. However, with a change in ß from 100 to 300, the emitter current has tripled. This is not acceptable in a power amplifier if we expect the collector voltage to swing from near VCC to near ground. However, for low level signals from micro-volts to about a volt. the bias point can be centered for a ß of the square root of (100-300)=173. The bias point will still drift by a considerable amount. However. low-level signals will not be clipped. Base-bias is not suitable for high emitter currents, as used in power amplifiers. The base-biased emitter current is not temperature stable. Thermal runaway is the result of high emitter current causing a temperature increase which causes an increase in emitter current, which further increases temperature. IE
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