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+ UGS D + S Figure 1. UDS A MOSFET (shown in Figure 1) operating in the triode region has a characteristic ips rela- tionship which depends on both ups and UGS: iDs = K [(VGS - VT) VDS - vs/2] where UGS > VT and VDS ≤ VGS - V₁. The small-signal relationship between ids, Ugs, and Uds can be expressed by an equation of the form ids = Avgs + Buds where A and B are constants. Assume that the device is biased at an operating point (VGS, VDS). (1A) (4 points) Draw the 2-element small-signal model for the device which is operating in the triode region. Express the element values in terms of A and B.

+ UGS D + S Figure 1. UDS A MOSFET (shown in Figure 1) operating in the triode region has a characteristic ips rela- tionship which depends on both ups and UGS: iDs = K [(VGS - VT) VDS - vs/2] where UGS > VT and VDS ≤ VGS - V₁. The small-signal relationship between ids, Ugs, and Uds can be expressed by an equation of the form ids = Avgs + Buds where A and B are constants. Assume that the device is biased at an operating point (VGS, VDS). (1A) (4 points) Draw the 2-element small-signal model for the device which is operating in the triode region. Express the element values in terms of A and B.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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+ UGS D + S Figure 1. UDS A MOSFET (shown in Figure 1) operating in the triode region has a characteristic ips rela- tionship which depends on both ups and UGS: iDs = K [(VGS - VT) VDS - vs/2] where UGS > VT and VDS ≤ UGS - VȚ. The small-signal relationship between ids, Ugs, and Uds can be expressed by an equation of the form ids = Avgs + Buds where A and B are constants. Assume that the device is biased at an operating point (VGS, VDS). (1A) (4 points) Draw the 2-element small-signal model for the device which is operating in the triode region. Express the element values in terms of A and B.
Transcribed Image Text:+ UGS D + S Figure 1. UDS A MOSFET (shown in Figure 1) operating in the triode region has a characteristic ips rela- tionship which depends on both ups and UGS: iDs = K [(VGS - VT) VDS - vs/2] where UGS > VT and VDS ≤ UGS - VȚ. The small-signal relationship between ids, Ugs, and Uds can be expressed by an equation of the form ids = Avgs + Buds where A and B are constants. Assume that the device is biased at an operating point (VGS, VDS). (1A) (4 points) Draw the 2-element small-signal model for the device which is operating in the triode region. Express the element values in terms of A and B.
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