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B: For the following circuit, assume that 1 = 0 (no device output conductances), y = 0 (no backgate transconductances) and ignore capacitances. T Voo Vout Vo R*. E Rp Vin EM, b) Derive or write down by inspection the small signal voltage gain, Vout/Vin. Case 1- No assumption required and what will be the answer? Case 2 - You can assume that Rp is much larger than the inverse transconductance of a device.(find the answer from the below options ) Vout/Vin = none of these O gm1*RD O gm1*RP

B: For the following circuit, assume that 1 = 0 (no device output conductances), y = 0 (no backgate transconductances) and ignore capacitances. T Voo Vout Vo R*. E Rp Vin EM, b) Derive or write down by inspection the small signal voltage gain, Vout/Vin. Case 1- No assumption required and what will be the answer? Case 2 - You can assume that Rp is much larger than the inverse transconductance of a device.(find the answer from the below options ) Vout/Vin = none of these O gm1*RD O gm1*RP

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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**Question B:** For the following circuit, assume that λ = 0 (no device output conductances), γ = 0 (no backgate transconductances), and ignore capacitances. **Circuit Diagram Description:** - The circuit is composed of two MOSFET transistors, \( M_1 \) and \( M_2 \). - \( M_1 \) is connected to the input voltage (\( V_{in} \)) and \( M_2 \) to the output voltage (\( V_{out} \)). - There are resistors \( R_D \) connected to the drain of \( M_2 \), and \( R_P \) connected to the source of \( M_1 \). - The power supply voltage is \( V_{DD} \). - \( V_b \) represents the bias voltage at the gate of \( M_2 \). - An unspecified resistor is represented as \( R^* \). **Question:** b) Derive or write down by inspection the small signal voltage gain, \( V_{out}/V_{in} \). - **Case 1**: No assumption required and what will be the answer? - **Case 2**: You can assume that \( R_P \) is much larger than the inverse transconductance of a device. (Find the answer from the options below) **Vout/Vin Options:** - none of these - \(-gm1 \times RD\) - \(gm1 \times RP\) - \(-gm1 \times RD/(gm2 \times RP)\) - \(-gm1 \times RP\)
Transcribed Image Text:**Question B:** For the following circuit, assume that λ = 0 (no device output conductances), γ = 0 (no backgate transconductances), and ignore capacitances. **Circuit Diagram Description:** - The circuit is composed of two MOSFET transistors, \( M_1 \) and \( M_2 \). - \( M_1 \) is connected to the input voltage (\( V_{in} \)) and \( M_2 \) to the output voltage (\( V_{out} \)). - There are resistors \( R_D \) connected to the drain of \( M_2 \), and \( R_P \) connected to the source of \( M_1 \). - The power supply voltage is \( V_{DD} \). - \( V_b \) represents the bias voltage at the gate of \( M_2 \). - An unspecified resistor is represented as \( R^* \). **Question:** b) Derive or write down by inspection the small signal voltage gain, \( V_{out}/V_{in} \). - **Case 1**: No assumption required and what will be the answer? - **Case 2**: You can assume that \( R_P \) is much larger than the inverse transconductance of a device. (Find the answer from the options below) **Vout/Vin Options:** - none of these - \(-gm1 \times RD\) - \(gm1 \times RP\) - \(-gm1 \times RD/(gm2 \times RP)\) - \(-gm1 \times RP\)
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