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esign (Z, = 2 kn), (Z, = 1.8 kn). Assume that the transistor is silicon with, (B = 80) (r. = %3D = 00 ), (hie = 1.2 kn) and (R2 = 5 kn). Vect + 20V Rc R, Cs ER: RE

esign (Z, = 2 kn), (Z, = 1.8 kn). Assume that the transistor is silicon with, (B = 80) (r. = %3D = 00 ), (hie = 1.2 kn) and (R2 = 5 kn). Vect + 20V Rc R, Cs ER: RE

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Design the BJT amplifier circuit shown below to have a (A, = -5), (Zn = 2.5 kn), (Z, = 2 kn), (Z, = 1.8 kM). Assume that the transistor is silicon with, (B 80) ). (hie = 1.2 kn) = 00 and (R2 = 5 kn). Vect + 20V ER R ER: RE IN
Transcribed Image Text:Design the BJT amplifier circuit shown below to have a (A, = -5), (Zn = 2.5 kn), (Z, = 2 kn), (Z, = 1.8 kM). Assume that the transistor is silicon with, (B 80) ). (hie = 1.2 kn) = 00 and (R2 = 5 kn). Vect + 20V ER R ER: RE IN
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