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Given the following data for the intrinsic semiconductor of InP: (a) &g = 1.3 eV, me = 0.07m, m₁ = 0.69m, μ = 4600 cm²/V-s, h = 150 cm²/V-s; T = 300 K. Calculate the effective density of states in the valence and conduction bands. Calculate the intrinsic electron and hole concentrations at room temperature. Calculate the position of the intrinsic Fermi-level at room temperature. (b) (c) (d) Calculate the concentration of holes and conduction electrons, when adding p-type dopants with a concentration of 109 cm³. Assume that all dopant atoms are ionized. Calculate and illustrate where the Fermi-level is located in the energy band. (e) (f) Calculate the electron and hole lifetimes. (g) Calculate the total conductivity at room temperature of the p-doped material.

Given the following data for the intrinsic semiconductor of InP: (a) &g = 1.3 eV, me = 0.07m, m₁ = 0.69m, μ = 4600 cm²/V-s, h = 150 cm²/V-s; T = 300 K. Calculate the effective density of states in the valence and conduction bands. Calculate the intrinsic electron and hole concentrations at room temperature. Calculate the position of the intrinsic Fermi-level at room temperature. (b) (c) (d) Calculate the concentration of holes and conduction electrons, when adding p-type dopants with a concentration of 109 cm³. Assume that all dopant atoms are ionized. Calculate and illustrate where the Fermi-level is located in the energy band. (e) (f) Calculate the electron and hole lifetimes. (g) Calculate the total conductivity at room temperature of the p-doped material.

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Given the following data for the intrinsic semiconductor of InP: (a) &g = 1.3 eV, me = 0.07m, m₁ = 0.69m, μ = 4600 cm²/V-s, h = 150 cm²/V-s; T = 300 K. Calculate the effective density of states in the valence and conduction bands. Calculate the intrinsic electron and hole concentrations at room temperature. Calculate the position of the intrinsic Fermi-level at room temperature. (b) (c) (d) Calculate the concentration of holes and conduction electrons, when adding p-type dopants with a concentration of 109 cm³. Assume that all dopant atoms are ionized. Calculate and illustrate where the Fermi-level is located in the energy band. (e) (f) Calculate the electron and hole lifetimes. (g) Calculate the total conductivity at room temperature of the p-doped material.
Transcribed Image Text:Given the following data for the intrinsic semiconductor of InP: (a) &g = 1.3 eV, me = 0.07m, m₁ = 0.69m, μ = 4600 cm²/V-s, h = 150 cm²/V-s; T = 300 K. Calculate the effective density of states in the valence and conduction bands. Calculate the intrinsic electron and hole concentrations at room temperature. Calculate the position of the intrinsic Fermi-level at room temperature. (b) (c) (d) Calculate the concentration of holes and conduction electrons, when adding p-type dopants with a concentration of 109 cm³. Assume that all dopant atoms are ionized. Calculate and illustrate where the Fermi-level is located in the energy band. (e) (f) Calculate the electron and hole lifetimes. (g) Calculate the total conductivity at room temperature of the p-doped material.
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