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Suppose in a donor doped semiconductor at a particular temperature, EF is 0.015 eV above than ED level when Ec-ED = 0.045 eV. Comment on whether there will be partial ionization or full ionization in this case.

1 (a) Suppose in a donor doped semiconductor at a particular temperature, EF is 0.015 eV above
than ED level when Ec-ED = 0.045 eV. Comment on whether there will be partial ionization or full
ionization in this case.

1 (b) When EF touches intrinsic Fermi energy EFi, comment on whether an extrinsic semiconductor
will stay extrinsic or not. What will be ultimate state of semiconductor in this case?

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