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Suppose in a donor doped semiconductor at a particular temperature, EF is 0.015 eV above than ED level when Ec-ED = 0.045 eV. Comment on whether there will be partial ionization or full ionization in this case.

1 (a) Suppose in a donor doped semiconductor at a particular temperature, EF is 0.015 eV above
than ED level when Ec-ED = 0.045 eV. Comment on whether there will be partial ionization or full
ionization in this case.
Transcribed Image Text:1 (a) Suppose in a donor doped semiconductor at a particular temperature, EF is 0.015 eV above than ED level when Ec-ED = 0.045 eV. Comment on whether there will be partial ionization or full ionization in this case.
1 (b) When EF touches intrinsic Fermi energy EFi, comment on whether an extrinsic semiconductor
will stay extrinsic or not. What will be ultimate state of semiconductor in this case?
Transcribed Image Text:1 (b) When EF touches intrinsic Fermi energy EFi, comment on whether an extrinsic semiconductor will stay extrinsic or not. What will be ultimate state of semiconductor in this case?
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