A region of N-type semiconductor doped by Nd=10^15 cm^-3 is fully depleted of both majority and minority carriers by an external electric field. Assuming that the concentration of electron-hole pairs that is generated per unit time does not change when the semiconductor is depleted, determine the effective generation rate if the semiconductor is (a) Si (ni = 1.02 × 1010 cm-3) and (b) GaAs (ni = 2.1 × 106 cm-3). The minority-carrier lifetime is 1 μs in both cases.
A region of N-type semiconductor doped by Nd=10^15 cm^-3 is fully depleted of both majority and minority carriers by an external electric field. Assuming that the concentration of electron-hole pairs that is generated per unit time does not change when the semiconductor is depleted, determine the effective generation rate if the semiconductor is (a) Si (ni = 1.02 × 1010 cm-3) and (b) GaAs (ni = 2.1 × 106 cm-3). The minority-carrier lifetime is 1 μs in both cases.
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Transcribed Image Text:A region of N-type
semiconductor
doped by Nd=10^15 cm^-3 is fully
depleted of both majority and
minority carriers by an external
electric field. Assuming that the
concentration of electron-hole
pairs that is generated per unit
time does not change when the
semiconductor is depleted,
determine the effective
generation rate if the
semiconductor is
(a) Si (ni = 1.02 × 1010 cm-3) and
(b) GaAs (ni = 2.1 × 106 cm-3).
The minority-carrier lifetime is 1 μs
in both cases.
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