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Germanium (Ge) has a bandgap energy of 0.66 eV, an effective electron mass of m,"=0.08m,, and an effective hole mass of m,"=0.28m,. For a sample of Ge at the temperature of 550 K: a) What is the modified Fermi energy? b) What is the effective density of states for the electrons in the conduction band (Nc)? c) What is the concentration of electrons in the conduction band (n)?

Germanium (Ge) has a bandgap energy of 0.66 eV, an effective electron mass of m,"=0.08m,, and an effective hole mass of m,"=0.28m,. For a sample of Ge at the temperature of 550 K: a) What is the modified Fermi energy? b) What is the effective density of states for the electrons in the conduction band (Nc)? c) What is the concentration of electrons in the conduction band (n)?

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Germanium (Ge) has a bandgap energy of 0.66 ev, an effective electron mass of m,*=0.08m,, and an effective hole mass of m,"=0.28m,. For a sample of Ge at the temperature of 550 K: a) What is the modified Fermi energy? b) What is the effective density of states for the electrons in the conduction band (Nc)? c) What is the concentration of electrons in the conduction band (n.)? d) What is the concentration of holes in the valence band (n,)? e) Now consider a piece of Germanium that has been doped to form a p-n junction with an acceptor and donor densities of NA=5x1016 cm Sand Np=1.65x10" cm, respectively, and a depletion region of thickness W=200 nm. Calculate te contact potential (Vo) of this Ge p-n junction (consider the temperature given at the beginning of this question). 1) Plot the potential difference across the junction in the absence of an applied electric field, labeling the p- and n-doped areas and the depletion region. g) Estimate the electric field across the junction.
Transcribed Image Text:Germanium (Ge) has a bandgap energy of 0.66 ev, an effective electron mass of m,*=0.08m,, and an effective hole mass of m,"=0.28m,. For a sample of Ge at the temperature of 550 K: a) What is the modified Fermi energy? b) What is the effective density of states for the electrons in the conduction band (Nc)? c) What is the concentration of electrons in the conduction band (n.)? d) What is the concentration of holes in the valence band (n,)? e) Now consider a piece of Germanium that has been doped to form a p-n junction with an acceptor and donor densities of NA=5x1016 cm Sand Np=1.65x10" cm, respectively, and a depletion region of thickness W=200 nm. Calculate te contact potential (Vo) of this Ge p-n junction (consider the temperature given at the beginning of this question). 1) Plot the potential difference across the junction in the absence of an applied electric field, labeling the p- and n-doped areas and the depletion region. g) Estimate the electric field across the junction.
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