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are made of Au with a work function of 5.1 eV. The electron affinity, Fermi energy and band gap for the amorphous semiconductor are 4.1 eV, 4.6 eV and 1.2 eV, respectively. If the source and drain electrodes are electrically connected with a zero potential difference, sketch the energy band diagram under a positive, zero and negative gate voltage, respectively, with respect to the source and drain electrodes.

are made of Au with a work function of 5.1 eV. The electron affinity, Fermi energy and band gap for the amorphous semiconductor are 4.1 eV, 4.6 eV and 1.2 eV, respectively. If the source and drain electrodes are electrically connected with a zero potential difference, sketch the energy band diagram under a positive, zero and negative gate voltage, respectively, with respect to the source and drain electrodes.

College Physics
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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are made of Au with a work function of 5.1 eV. The electron affinity, Fermi energy and band gap for the amorphous semiconductor are 4.1 eV, 4.6 eV and 1.2 eV, respectively. If the source and drain electrodes are electrically connected with a zero potential difference, sketch the energy band diagram under a positive, zero and negative gate voltage, respectively, with respect to the source and drain electrodes. Amorphous semiconductor thin film Source Drain SiO, Gate
Transcribed Image Text:are made of Au with a work function of 5.1 eV. The electron affinity, Fermi energy and band gap for the amorphous semiconductor are 4.1 eV, 4.6 eV and 1.2 eV, respectively. If the source and drain electrodes are electrically connected with a zero potential difference, sketch the energy band diagram under a positive, zero and negative gate voltage, respectively, with respect to the source and drain electrodes. Amorphous semiconductor thin film Source Drain SiO, Gate
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