*37 O Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11 eV be- tween the top of the valence band and the bottom of the conduction Conduction band Fermi 1.11 ev Donor level band. At 300 K the Fermi level of level the pure material is nearly at the mid-point of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.15 eV be- Valence band low the bottom of the silicon con- Figure 41-22 Problem 37. duction band, and suppose further that doping raises the Fermi level to 0.11 eV below the bottom of that band (Fig. 41-22). For (a) pure and (b) doped silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied. (c) Calculate the probability that a state in the doped material (at the donor level) is occupied.

*37 O Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11 eV be- tween the top of the valence band and the bottom of the conduction Conduction band Fermi 1.11 ev Donor level band. At 300 K the Fermi level of level the pure material is nearly at the mid-point of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.15 eV be- Valence band low the bottom of the silicon con- Figure 41-22 Problem 37. duction band, and suppose further that doping raises the Fermi level to 0.11 eV below the bottom of that band (Fig. 41-22). For (a) pure and (b) doped silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied. (c) Calculate the probability that a state in the doped material (at the donor level) is occupied.

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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Question

*37 O Doping changes the Fermi
energy of a semiconductor. Consider
silicon, with a gap of 1.11 eV be-
tween the top of the valence band
and the bottom of the conduction
Conduction band
Fermi
1.11 ev
Donor
level
band. At 300 K the Fermi level of
level
the pure material is nearly at the
mid-point of the gap. Suppose that
silicon is doped with donor atoms,
each of which has a state 0.15 eV be-
Valence band
low the bottom of the silicon con-
Figure 41-22 Problem 37.
duction band, and suppose further
that doping raises the Fermi level to 0.11 eV below the bottom of
that band (Fig. 41-22). For (a) pure and (b) doped silicon, calculate
the probability that a state at the bottom of the silicon conduction
band is occupied. (c) Calculate the probability that a state in the
doped material (at the donor level) is occupied.

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