For an ideal MOS structure with a oxide charge density of 1010 cm-2 n-type Si substrate with doping concentration N₁ = 1017 cm3, wha

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For an ideal MOS structure with a fixed
oxide charge density of 1010 cm-2 on an
n-type Si substrate with doping
concentration Nd = 1017 cm³, what is the
hole density adjacent to the oxide
interface at the inversion threshold?
O 1.0e7 cm^(-3)
O 1.5e15 cm^(-3)
O 1.0e17 cm^(-3)
1.5e10 cm^(-3)
O 3.2e13 cm^(-3)
Transcribed Image Text:For an ideal MOS structure with a fixed oxide charge density of 1010 cm-2 on an n-type Si substrate with doping concentration Nd = 1017 cm³, what is the hole density adjacent to the oxide interface at the inversion threshold? O 1.0e7 cm^(-3) O 1.5e15 cm^(-3) O 1.0e17 cm^(-3) 1.5e10 cm^(-3) O 3.2e13 cm^(-3)
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