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dioxide-silicon Consider an aluminum-silicon MOS device with an acceptor concentration of = Na 9 N₁ = 2 X 10¹8 cm-3 an oxide thickness tox 40 nm and an oxide charge of Q's=5 X 10-10 C/cm². For an aluminum-silicon dioxide SS junction, Pm = 3.20 V and for a silicon-silicon dioxide junction, x = 3.25 V and for silicon Eg = = 1.12 V. Determine the metal-semiconductor work function difference, Pms and use that to calculate the flat-band voltage, VFB. The relative permittivity of silicon dioxide is 3.9. VFB = -0.953 V VFB = -0.900 V VFB = -1.095 V VFB = -1.053 V

dioxide-silicon Consider an aluminum-silicon MOS device with an acceptor concentration of = Na 9 N₁ = 2 X 10¹8 cm-3 an oxide thickness tox 40 nm and an oxide charge of Q's=5 X 10-10 C/cm². For an aluminum-silicon dioxide SS junction, Pm = 3.20 V and for a silicon-silicon dioxide junction, x = 3.25 V and for silicon Eg = = 1.12 V. Determine the metal-semiconductor work function difference, Pms and use that to calculate the flat-band voltage, VFB. The relative permittivity of silicon dioxide is 3.9. VFB = -0.953 V VFB = -0.900 V VFB = -1.095 V VFB = -1.053 V

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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**Problem Statement for Educational Purpose:** Consider an aluminum-silicon dioxide-silicon MOS device with the following characteristics: - Acceptor concentration, \(N_a = 2 \times 10^{18} \, \text{cm}^{-3}\) - Oxide thickness, \(t_{ox} = 40 \, \text{nm}\) - Oxide charge, \(Q'_{ss} = 5 \times 10^{-10} \, \text{C/cm}^2\) Additional parameters for the junctions are given as: - Metal work function for aluminum-silicon dioxide junction, \(\Phi_m = 3.20 \, \text{V}\) - Electron affinity for a silicon-silicon dioxide junction, \(\chi = 3.25 \, \text{V}\) - Energy gap for silicon, \(E_g = 1.12 \, \text{V}\) **Objective:** Determine the metal-semiconductor work function difference, \(\Phi_{ms}\). Use this value to calculate the flat-band voltage, \(V_{FB}\). **Given Relative Permittivity:** - Relative permittivity of silicon dioxide is 3.9. **Options for \(V_{FB}\):** - \(V_{FB} = -0.953 \, \text{V}\) - \(V_{FB} = -0.900 \, \text{V}\) - \(V_{FB} = -1.095 \, \text{V}\) - \(V_{FB} = -1.053 \, \text{V}\) **Instructions:** Utilize the provided parameters to compute the values accurately, following standard computational methods in semiconductor physics.
Transcribed Image Text:**Problem Statement for Educational Purpose:** Consider an aluminum-silicon dioxide-silicon MOS device with the following characteristics: - Acceptor concentration, \(N_a = 2 \times 10^{18} \, \text{cm}^{-3}\) - Oxide thickness, \(t_{ox} = 40 \, \text{nm}\) - Oxide charge, \(Q'_{ss} = 5 \times 10^{-10} \, \text{C/cm}^2\) Additional parameters for the junctions are given as: - Metal work function for aluminum-silicon dioxide junction, \(\Phi_m = 3.20 \, \text{V}\) - Electron affinity for a silicon-silicon dioxide junction, \(\chi = 3.25 \, \text{V}\) - Energy gap for silicon, \(E_g = 1.12 \, \text{V}\) **Objective:** Determine the metal-semiconductor work function difference, \(\Phi_{ms}\). Use this value to calculate the flat-band voltage, \(V_{FB}\). **Given Relative Permittivity:** - Relative permittivity of silicon dioxide is 3.9. **Options for \(V_{FB}\):** - \(V_{FB} = -0.953 \, \text{V}\) - \(V_{FB} = -0.900 \, \text{V}\) - \(V_{FB} = -1.095 \, \text{V}\) - \(V_{FB} = -1.053 \, \text{V}\) **Instructions:** Utilize the provided parameters to compute the values accurately, following standard computational methods in semiconductor physics.
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