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1- Consider an n-type silicon for which the dopant concentration Np = 1017 /cm³. Find the electron and hole concentrations at 360 K.

1- Consider an n-type silicon for which the dopant concentration Np = 1017 /cm³. Find the electron and hole concentrations at 360 K.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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**Problem 1:** Consider an n-type silicon for which the dopant concentration \( N_D = 10^{17} \, \text{cm}^{-3} \). Find the electron and hole concentrations at 360 K. **Problem 2:** For a silicon crystal doped with boron, what must \( N_A \) be if at \( T = 320 \, \text{K} \) the electron concentration drops below the intrinsic level by a factor of \( 10^5 \)?
Transcribed Image Text:**Problem 1:** Consider an n-type silicon for which the dopant concentration \( N_D = 10^{17} \, \text{cm}^{-3} \). Find the electron and hole concentrations at 360 K. **Problem 2:** For a silicon crystal doped with boron, what must \( N_A \) be if at \( T = 320 \, \text{K} \) the electron concentration drops below the intrinsic level by a factor of \( 10^5 \)?
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