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Consider an ideal, long-base, silicon abrupt P+N junction diode with uniform cross section and constant doping on either side of the junction. The diode is made from a heavily doped P-type material and 0.50cm N-type materials in which the minority carrier lifetime is 10-8 s. Tp= = Answer the following questions on the n side of the junction only. (a) Calculate the density of the minority carriers as a function of x (distance from the junction) when the applied voltage is 0.589 V (which is 23 × kT/q). (b) Find and sketch the majority and minority carrier currents as functions of x (distance from the junction), under the applied bias voltage of part (a). (c) What is the majority carrier diffusion current as a function of x? The purpose of the following questions is to show that the minority drift current is negligible. (d) Use the results of parts (b) and (c) to find the majority carrier drift current, Indrift. Then find electric field 8(x), and finally the minority drift current Jpdrift. Is Jpdrift << Jpdiff? Sketch Jpdrift and Jpdiff in the same graph. (e) Justify the assumption of n' = p'.

Consider an ideal, long-base, silicon abrupt P+N junction diode with uniform cross section and constant doping on either side of the junction. The diode is made from a heavily doped P-type material and 0.50cm N-type materials in which the minority carrier lifetime is 10-8 s. Tp= = Answer the following questions on the n side of the junction only. (a) Calculate the density of the minority carriers as a function of x (distance from the junction) when the applied voltage is 0.589 V (which is 23 × kT/q). (b) Find and sketch the majority and minority carrier currents as functions of x (distance from the junction), under the applied bias voltage of part (a). (c) What is the majority carrier diffusion current as a function of x? The purpose of the following questions is to show that the minority drift current is negligible. (d) Use the results of parts (b) and (c) to find the majority carrier drift current, Indrift. Then find electric field 8(x), and finally the minority drift current Jpdrift. Is Jpdrift << Jpdiff? Sketch Jpdrift and Jpdiff in the same graph. (e) Justify the assumption of n' = p'.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Consider an ideal, long-base, silicon abrupt P+N junction diode with uniform cross section and constant doping on either side of the junction. The diode is made from a heavily doped P-type material and 0.50cm N-type materials in which the minority carrier lifetime is 10-8 s. Tp= = Answer the following questions on the n side of the junction only. (a) Calculate the density of the minority carriers as a function of x (distance from the junction) when the applied voltage is 0.589 V (which is 23 × kT/q). (b) Find and sketch the majority and minority carrier currents as functions of x (distance from the junction), under the applied bias voltage of part (a). (c) What is the majority carrier diffusion current as a function of x? The purpose of the following questions is to show that the minority drift current is negligible. (d) Use the results of parts (b) and (c) to find the majority carrier drift current, Indrift. Then find electric field 8(x), and finally the minority drift current Jpdrift. Is Jpdrift << Jpdiff? Sketch Jpdrift and Jpdiff in the same graph. (e) Justify the assumption of n' = p'.
Transcribed Image Text:Consider an ideal, long-base, silicon abrupt P+N junction diode with uniform cross section and constant doping on either side of the junction. The diode is made from a heavily doped P-type material and 0.50cm N-type materials in which the minority carrier lifetime is 10-8 s. Tp= = Answer the following questions on the n side of the junction only. (a) Calculate the density of the minority carriers as a function of x (distance from the junction) when the applied voltage is 0.589 V (which is 23 × kT/q). (b) Find and sketch the majority and minority carrier currents as functions of x (distance from the junction), under the applied bias voltage of part (a). (c) What is the majority carrier diffusion current as a function of x? The purpose of the following questions is to show that the minority drift current is negligible. (d) Use the results of parts (b) and (c) to find the majority carrier drift current, Indrift. Then find electric field 8(x), and finally the minority drift current Jpdrift. Is Jpdrift << Jpdiff? Sketch Jpdrift and Jpdiff in the same graph. (e) Justify the assumption of n' = p'.
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