6. Diode equation A diode has a forward bias applied equal to 0.7 V; a 1 mA current flows at room tem- perature. Calculate the current for forward biases of 0.5 V, 0.6 V, and 0.8 V using the characteristic equation for the diode (called the terminal equation in the textbook) with ideality factor n = 1.
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- Consider a silicon pn junction diode at T 300K. The reverse saturation current is Is = 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.573 V and use that to determine the DC and AC resistance of the diode. RDC = 14.13 k rac = 639 Q RDC = 234 Q2 = rac=8Q RDC = 7.00 KQ rac = 307 Q RDC = 1.43 kQ rac = 58 QDesign a clipping circuit that will limit the output voltage to 5V when applying an input sinusoidal waveform with a peak value of 10V. Assume available diodes with voltage drop of 0.5V. Sketch the output waveform of the circuit.A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
- Zener diodes are special purpose diodes designed to operate in their breakdown regions. Describe the working principle and characteristics of a typical Zener diode found in the market place. The Zener-diode regulator circuit shown below is to be used to provide a stabilised output to the load. The zener diode characteristic is also shown. Find the load voltage and source current if the battery voltage is 20 V, series resistance is 1.4 kohm and load resistance is 6 kohmFor a silicon pn junction with T = 300 K, determine the diode current. The Is (reverse saturation current) is 10 raise to -14 or (10^-14) A. Determine the forward-bias diode current at VD = 0.5V, 0.6 V and 0.7V.A one-sided abrupt silicon p-n junction diode is to be designed to have a breakdown voltage of at least 60 V and to have a forward-bias current of 50 mA for an applied voltage of 0.625 V while still operating under low injection. The minority carrier lifetimes are To = Tno = Tpo = 2 x 10-7 sec. Determine the doping concentrations and the minimum cross-sectional area.
- Two identical Schottky diodes are connected in series, one in the forward and the other in reverse direction, see figure. Assume the reverse saturation current, IS, of each diode to be known. Derive he current-voltage curve I(V) of this circuit. Plot it with the ratio I / IS on the y-axis and V / Vth on the x-axis. Make sure to cover a broad range of voltages, say, from –10 Vth to 10 Vth.Demonstrate clipping of negative waves with an inverted diode in the output.A circuit which removes the peak of a waveform is known as a clipper. Show a negativeProduce a schematic diagram.During the positive half cycle of the 5 V peak input, the diode is reversed biased. The diodedoes not conduct. It is as if the diode were not there. Show the positive half cycle isunchanged at the output V(2). Show the output positive peaks overlays the input sinewaveV(1).Voltage values: Resistor valuse: 1 K ΩDC offset: 0 VAmplitude: 5 VFreq: 1 KHz3) Demonstrate clipping of negative waves with an inverted diode in the output. A circuit which removes the peak of a waveform is known as a clipper. Show a negative clipper. Produce a schematic diagram with LTspice schematic capture program. During the positive half cycle of the 5 V peak input, the diode is reversed biased. The diode does not conduct. It is as if the diode were not there. Show the positive half cycle is unchanged at the output V(2). Show the output positive peaks overlays the input sinewave V(1). Use in the LTSPICE display module, the command "plot v(1)+1)" accomplishes this. Voltage values: Resistor valuse: 1 ΚΩ DC offset: 0 V Amplitude: 5 V Freq: 1 KHz
- a) Use the diode’s characteristic equation,ID=Is exp(VD/VT), to determine the currentsourceIso that the output voltage is 1.5 V. b) If a load is attached to the output that draws 1 mA, what is the output voltage? c) If the circuit heats up to 40◦C, what is the output voltage without a load?Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE1. The reverse-saturation current of a pn junction diode is Is = 10-¹¹ A. Determine the diode current for diode voltages of 0.3, 0.5, 0.7, -0.02, -0.2, and -2V at T=300K.