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0 (a) Calculate the small signal capacitance at zero bias and 300 K for an ideal Schottky barrier [see Eq. (4.16.2)] between platinum (work function 5.3 eV) and silicon doped with Nd=1016 cm³. The area of the Schottky diode is 10-5 cm². (b) Calculate the reverse bias at which the capacitance is reduced by 25% from its zero- bias value.

0 (a) Calculate the small signal capacitance at zero bias and 300 K for an ideal Schottky barrier [see Eq. (4.16.2)] between platinum (work function 5.3 eV) and silicon doped with Nd=1016 cm³. The area of the Schottky diode is 10-5 cm². (b) Calculate the reverse bias at which the capacitance is reduced by 25% from its zero- bias value.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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0 (a) Calculate the small signal capacitance at zero bias and 300 K for an ideal Schottky barrier [see Eq. (4.16.2)] between platinum (work function 5.3 eV) and silicon doped with Nd=1016 cm³. The area of the Schottky diode is 10-5 cm². (b) Calculate the reverse bias at which the capacitance is reduced by 25% from its zero- bias value.
Transcribed Image Text:0 (a) Calculate the small signal capacitance at zero bias and 300 K for an ideal Schottky barrier [see Eq. (4.16.2)] between platinum (work function 5.3 eV) and silicon doped with Nd=1016 cm³. The area of the Schottky diode is 10-5 cm². (b) Calculate the reverse bias at which the capacitance is reduced by 25% from its zero- bias value.
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