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7. Ideally, a diode can be represented by a: a. voltage source b. resistance C. switch d. all of these 8. For a silicon diode, the value of the forward-bias voltage typically: must be greater than 0.3 V must be greater than 0.7 V c. depends on the width of the depletion region d. depends on the concentration of majority a. b.

7. Ideally, a diode can be represented by a: a. voltage source b. resistance C. switch d. all of these 8. For a silicon diode, the value of the forward-bias voltage typically: must be greater than 0.3 V must be greater than 0.7 V c. depends on the width of the depletion region d. depends on the concentration of majority a. b.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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7. Ideally, a diode can be represented by a: a. voltage source b. resistance C. switch d. all of these 8. For a silicon diode, the value of the forward-bias voltage typically: must be greater than 0.3 V must be greater than 0.7 V c. depends on the width of the depletion region d. depends on the concentration of majority a. b.
Transcribed Image Text:7. Ideally, a diode can be represented by a: a. voltage source b. resistance C. switch d. all of these 8. For a silicon diode, the value of the forward-bias voltage typically: must be greater than 0.3 V must be greater than 0.7 V c. depends on the width of the depletion region d. depends on the concentration of majority a. b.
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