Calculate the drift current density in (mA/m2) for the silicon at roomtemperature. If the intrinsic carrier concentration of (2x1016electron/m³) withthe doping concentration of (3x1016atoms/m³) of the phosphorus and(2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s)and the mobility for the holes (0.05m2/V.s) and the electric field (100V/m).85.75O 62.77O 82.77O 72.7280.77

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Answered: Calculate the drift current density in…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Q1/Fill in the following blanks and explain the solution steps in detail for studies that require a mathematical solution 1-The charge carriers in conductors are 2- Approximately in a pure semiconductor, the distance between the Versese plane and the tactile bundle is And the Atorement Package 3- Electron density and hole in a pure semiconductor varies with change 4- The majority of charge carriers in the p-type semiconductor in 5- Fermi level in semiconductor non-negative type approaching from From 6- The current of saturation depends on 7-A wide area arises in the area of depletion because this area is treated as The charge carriers in semiconductors are. According to the equation And the carriers of the n type are The distance between the delivery package While in semi-conductor non-negative type approaches
Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1×1016electron/m³) with the doping concentration of (2×1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m²/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?. 55nA 50nA 52nA 65nA 60nA 62nA 48NA
For a P-type semiconductor with length of 55mm, the cross-section area of 0.55mm2, and resistance of 2502. Calculate the exact number of the majority and the minority carriers (in electrons/m2). Also, calculate the number of acceptor atoms (in atoms/m') if the intrinsic carrier is 2x1020 electrons/m3. Given the mobility for the electrons (ue-0.4m2/V.s) and for the holes (0.2m2/V.s) O 1.23e22, 3e18, 1.23e22 O 1.25e22, 3.2e18, 1.23e22 O 1.25e22, 3.2e18, 1.25e22 O 123e22, 3.2e16, 1.25e22 Ina semiconductor it is ohserved that 0 75 of the current is carried by 2 points
5) Germanium doped with 1024 m3 Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s.
the electron and hole mobilities in silicon at 320 K are 0.13 and 0.029, and assuming hole and electron charge densities are 0.0033 C/m ³ and -0.0033 C/m ³, 3 :respectively, find the component of the conductivity due (a) ;to holes the component of the conductivity due (b) ;to electrons .the conductivity (c)
What is the value of reverse recovery charge developed in diode which is having the rate of fall of diode current 43.6 A/µs and trr is equal to 3.5 µs. a. 763.00 µC b. 534.10 µC c. 122.50 µC d. 267.05 µC
Where is the Fermi-level of a boron doped Si semiconductor at 77 K, 300 K, and 600 K at full activation of dopants? The Fermi-level shall be related to the intrinsic Fermi-level Ej. (NA = 107 cm3, Eg(Si) = 1.12 ev, m,* = 0.3mo, m,* = 0.5mo.) Sketch the solution.
For a P-type semiconductor with length of 55mm, the cross-section area of 0.55mm?, and resistance of 2502. Calculate the exact number of the majority and the minority carriers (in electrons/m?). Also, calculate the number of acceptor atoms (in atoms/m') if the intrinsic carrier is 2×1020 electrons/m. Given the mobility for the electrons (u-0.4m?/V.s) and for the holes (H-0.2m/V.s) 1.23e22, 3.2e16, 1.25e22 O 1.25e22, 3.2e18, 1.23e22 O 1.23e22, 3e18, 1.23e22 O 1.25e22, 3.2e18, 1.25e22
Consider an n-type silicon for which the dopant concentration is ND = 1016 cm-3. Find: a) The electron and hole concentration at T = 300K b) Repeat for T = 500K
Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1.5x1016electron/m³) with the doping concentration of (2x10 atoms/m) of the phosphorus and (1×101 atoms/m) of Boron. Given the mobility for the electrons (0.15m?/V.s) and the mobility for the holes (0.05m?/V.s) and the electric field (100V/m). 66.2mA O 64.2mA O 67.2mA 65.2mA O 66.5mA O 64.5mA O

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