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ate the drift current density in (mA/m²) for the silicon at room ature. If the intrinsic carrier concentration of (2x101electron/m) with ping concentration of (3x1016atoms/m) of the phosphorus and atoms/m') of Boron. Given the mobility for the electrons (0.15m2/V.s) = mobility for the holes (0.05m2/V.s) and the electric field (100V/m). 72.72 82.77 85.75 62.77

ate the drift current density in (mA/m²) for the silicon at room ature. If the intrinsic carrier concentration of (2x101electron/m) with ping concentration of (3x1016atoms/m) of the phosphorus and atoms/m') of Boron. Given the mobility for the electrons (0.15m2/V.s) = mobility for the holes (0.05m2/V.s) and the electric field (100V/m). 72.72 82.77 85.75 62.77

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic carrier concentration of (2x101electron/m) with the doping concentration of (3x1016atoms/m) of the phosphorus and (2x101atoms/m) of Boron. Given the mobility for the electrons (0.15m/V.s) and the mobility for the holes (0.05m2/v.s) and the electric field (100V/m). 72.72 82.77 85.75 62.77 80.77
Transcribed Image Text:Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic carrier concentration of (2x101electron/m) with the doping concentration of (3x1016atoms/m) of the phosphorus and (2x101atoms/m) of Boron. Given the mobility for the electrons (0.15m/V.s) and the mobility for the holes (0.05m2/v.s) and the electric field (100V/m). 72.72 82.77 85.75 62.77 80.77
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