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Calculate the drift current density in (mA/m²) for the silicon at room temperature. If the intrinsic carrier concentration of (2x1016electron/m) with the doping concentration of (3x1016atoms/m³) of the phosphorus and (2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s) and the mobility for the holes (0.05m2/V.s) and the electric field (100V/m). 85.75 O 72.72 O 62.77 82.77 80.77

Calculate the drift current density in (mA/m²) for the silicon at room temperature. If the intrinsic carrier concentration of (2x1016electron/m) with the doping concentration of (3x1016atoms/m³) of the phosphorus and (2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s) and the mobility for the holes (0.05m2/V.s) and the electric field (100V/m). 85.75 O 72.72 O 62.77 82.77 80.77

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic carrier concentration of (2x1016electron/m³) with the doping concentration of (3x1016atoms/m³) of the phosphorus and (2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s) and thé mobility for the holes (0.05m2/V.s) and the electric field (100V/m). O 85.75 O 72.72 O 62.77 82.77 O 80.77
Transcribed Image Text:Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic carrier concentration of (2x1016electron/m³) with the doping concentration of (3x1016atoms/m³) of the phosphorus and (2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s) and thé mobility for the holes (0.05m2/V.s) and the electric field (100V/m). O 85.75 O 72.72 O 62.77 82.77 O 80.77
Expert Solution
Step 1

Given: If the intrinsic carrier concentration of:

ni=2×1016 electron/m3

with the doping concentration of the phosphorus is:

ND=3×1016 atoms/m3

and of Boron is:

NA=2×1016 atoms/m3

Given the mobility for the electrons is:

μe=0.15 m2/V.s

and the mobility for the holes is:

μh=0.05 m2/V.s

and the electric field is:

ε=100 V/m

To find:

Calculate the drift current density in (mA/m2) for the silicon at room temperature.

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