BONUS QUESTION6. A silicon sample, that is n-type, doped with N-10¹8 cm³ (assume there are no holes), has aresistance of 10 02. The sample has an area of 106 cm² and a length of 10 µm. Due to the high dopingthe sample mobility is (n = 800 cm²/V.s). What is the percentage of the dopant atoms that areionized (no/No)?(Remember: a =)RXAa) 43.2%b) 78.1%c) 96.3%d) 54.3%

Given: Nd=1018 cm-3R=10 L=10 μmA=10-6 cm2μ=800 cm2V·s Here, L=10 μm=10-4 cm

BONUS QUESTION 6. A silicon sample, that is n-type, doped with N-10¹8 cm³ (assume there are no holes), has a resistance of 10 02. The sample has an area of 106 cm² and a length of 10 μm. Due to the high doping the sample mobility is (n = 800 cm²/V.s). What is the percentage of the dopant atoms that are ionized (no/Na)? (Remember: a =) RXA a) 43.2% b) 78.1% c) 96.3% d) 54.3%

BONUS QUESTION 6. A silicon sample, that is n-type, doped with N-10¹8 cm³ (assume there are no holes), has a resistance of 10 02. The sample has an area of 106 cm² and a length of 10 μm. Due to the high doping the sample mobility is (n = 800 cm²/V.s). What is the percentage of the dopant atoms that are ionized (no/Na)? (Remember: a =) RXA a) 43.2% b) 78.1% c) 96.3% d) 54.3%

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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