(b) Explain what gives rise to diffusion current in a semiconductor. The one- dimensional Fick's second law for holes is: dp dx Jp =- where Jp is the hole diffusion current density; q is the electronic charge; Dp is the hole diffusion coefficient and p is the hole concentration in the semiconductor. If J, (0)= = 0.42 A/cm² and p (in cm 3) as a function of x (in cm) is given by: p=10¹3 (10+ exp(-2x10¹x)} determine the hole diffusion coefficient in this semiconductor.

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(b) Explain what gives rise to diffusion current in a semiconductor. The one-
dimensional Fick's second law for holes is:
Jp =-qDp Р
dp
dx
where J, is the hole diffusion current density; q is the electronic charge; Dp is the
hole diffusion coefficient and p is the hole concentration in the semiconductor. If
J, (0) = 0.42 A/cm² and p (in cm ³) as a function of x (in cm) is given by:
p=10¹³ {10+ exp(-2×10¹ x)}
determine the hole diffusion coefficient in this semiconductor.
Transcribed Image Text:(b) Explain what gives rise to diffusion current in a semiconductor. The one- dimensional Fick's second law for holes is: Jp =-qDp Р dp dx where J, is the hole diffusion current density; q is the electronic charge; Dp is the hole diffusion coefficient and p is the hole concentration in the semiconductor. If J, (0) = 0.42 A/cm² and p (in cm ³) as a function of x (in cm) is given by: p=10¹³ {10+ exp(-2×10¹ x)} determine the hole diffusion coefficient in this semiconductor.
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