For a semiconductor with a constant mobility ratio b=μn/μp > 1 independent of impurity concentration, find the maximum resistivity ρm in terms of the intrinsic resistivity ρi and the mobility ratio. (HINT: First, express the conductivity as the sum of the contributions of the electrons and holes. The expression will contain both n and p. Eliminate one of them by using the fact that their product is a constant at a given temperature. Next, to obtain the maximum resistivity, take a derivative with respect to the carrier concentration (which you did not eliminate in the previous step). Then obtain the ratio of ρm /ρi. This ratio should be independent of the carrier concentrations.)

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For a semiconductor with a constant mobility ratio b=μnp > 1 independent of impurity concentration, find the maximum resistivity ρm in terms of the intrinsic resistivity ρi and the mobility ratio.
(HINT: First, express the conductivity as the sum of the contributions of the electrons and holes. The expression will contain both n and p. Eliminate one of them by using the fact that their product is a constant at a given temperature. Next, to obtain the maximum resistivity, take a derivative with respect to the carrier concentration (which you did not eliminate in the previous step). Then obtain the ratio of ρmi. This ratio should be independent of the carrier concentrations.)

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