For a semiconductor with a constant mobility ratio b=μn/μp > 1 independent of impurity concentration, find the maximum resistivity ρm in terms of the intrinsic resistivity ρi and the mobility ratio. (HINT: First, express the conductivity as the sum of the contributions of the electrons and holes. The expression will contain both n and p. Eliminate one of them by using the fact that their product is a constant at a given temperature. Next, to obtain the maximum resistivity, take a derivative with respect to the carrier concentration (which you did not eliminate in the previous step). Then obtain the ratio of ρm /ρi. This ratio should be independent of the carrier concentrations.)
2.
For a semiconductor with a constant mobility ratio b=μn/μp > 1 independent of impurity concentration, find the maximum resistivity ρm in terms of the intrinsic resistivity ρi and the mobility ratio.
(HINT: First, express the conductivity as the sum of the contributions of the electrons and holes. The expression will contain both n and p. Eliminate one of them by using the fact that their product is a constant at a given temperature. Next, to obtain the maximum resistivity, take a derivative with respect to the carrier concentration (which you did not eliminate in the previous step). Then obtain the ratio of ρm /ρi. This ratio should be independent of the carrier concentrations.)
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