Assume you are to create n*pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm3, 9.8/cm3, and 5 1016/cm3, for emitter, base and collector regions, respectively. You also know L, = 10 µm, L, = 4 µm, µ, = 1600 cm?/Vs, H, = 600 cm²/Vs, n; = 1,5 1010 1/cm³, q = 1,602 10-19 C, e, = 12, e, = 8,85 10-12 F/m, V, = 25 mV. Calculate depletion zone width for EB junction.

Assume you are to create n*pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm3, 9.8/cm3, and 5 1016/cm3, for emitter, base and collector regions, respectively. You also know L, = 10 µm, L, = 4 µm, µ, = 1600 cm?/Vs, H, = 600 cm²/Vs, n; = 1,5 1010 1/cm³, q = 1,602 10-19 C, e, = 12, e, = 8,85 10-12 F/m, V, = 25 mV. Calculate depletion zone width for EB junction.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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