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Electrical Engineering a light beam illuminates a detector made of n type silicon with doping Nd=9.3E16cm-3 such that the carrier generation rate is g'=6.6E21cm-3s-1. Assume that tau n0=1.4E-6 and tau p0=5.1E-7, T0=300K.   a) determine the thermal equilibrium value of Ef-Efi.   b) calculate the quasi-fermi levels for electrons and holes with respect to Efi.

Electrical Engineering a light beam illuminates a detector made of n type silicon with doping Nd=9.3E16cm-3 such that the carrier generation rate is g'=6.6E21cm-3s-1. Assume that tau n0=1.4E-6 and tau p0=5.1E-7, T0=300K.   a) determine the thermal equilibrium value of Ef-Efi.   b) calculate the quasi-fermi levels for electrons and holes with respect to Efi.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Electrical Engineering

a light beam illuminates a detector made of n type silicon with doping Nd=9.3E16cm-3 such that the carrier generation rate is g'=6.6E21cm-3s-1. Assume that tau n0=1.4E-6 and tau p0=5.1E-7, T0=300K.
 
a) determine the thermal equilibrium value of Ef-Efi.
 
b) calculate the quasi-fermi levels for electrons and holes with respect to Efi. 
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