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1- The basic building block of MOSFET is the Gate-drain-source. (T/F) 2- Define drift velocity of electron. 3- Why do we prefer n-type semiconductor to fabricate some unipolar devices? Explain.

1- The basic building block of MOSFET is the Gate-drain-source. (T/F) 2- Define drift velocity of electron. 3- Why do we prefer n-type semiconductor to fabricate some unipolar devices? Explain.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q5) 1- The basic building block of MOSFET is the Gate-drain-source. (T/F) 2- Define drift velocity of electron. 3- Why do we prefer n-type semiconductor to fabricate some unipolar devices? Explain. 4- What is the difference between real and ideal diodes? 5- At temperature T=500K, the bandgap energy for Si and GaAs are > 1.2 eV. (T/F)
Transcribed Image Text:Q5) 1- The basic building block of MOSFET is the Gate-drain-source. (T/F) 2- Define drift velocity of electron. 3- Why do we prefer n-type semiconductor to fabricate some unipolar devices? Explain. 4- What is the difference between real and ideal diodes? 5- At temperature T=500K, the bandgap energy for Si and GaAs are > 1.2 eV. (T/F)
Expert Solution
Step 1

Given that  

1- The basic building block of MOSFET is the Gate-drain-source. (T/F)

2- Define drift velocity of electron.

3- Why do we prefer n-type semiconductor to fabricate some unipolar devices? Explain.

4- What is the difference between real and ideal diodes?

5.

At temperature T-500K, the bandgap energy for Si and GaAs are > 1.2 eV. (T/F)

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