A Ge semiconductor sample has an area of 1×103 cm² and a length of 50 um is doped with Nd = 1×1018 cm3, the sample is then optically excited resulting in an optical generation rate of 1×1020 cm3 excess EHPS, assume the recombination life times of both electrons and holes are equal to 1 us. The change of the sample resistance after excitation will be:

A Ge semiconductor sample has an area of 1×103 cm² and a length of 50 um is doped with Nd = 1×1018 cm3, the sample is then optically excited resulting in an optical generation rate of 1×1020 cm3 excess EHPS, assume the recombination life times of both electrons and holes are equal to 1 us. The change of the sample resistance after excitation will be:

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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