An ideal silicon p-n junction has ND = 1 x 10¹6 cm¹³, N₁ = 2 x 10¹6 cm²³, tp = 1x10-6 s, and Tn = 0.5x10-6 s. (a) Calculate the theoretical saturation current density at 300 K. (b) Calculate the forward and reverse current density at +/-0.5 V. (a) J₁ = (units= (b) J(V=-0.5 V) =. J(V=+0.5 V) = _(units= _(units=

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An ideal silicon p-n junction has N₂ = 1 x 10¹6 cm³, N₁ = 2 x 10¹6 cm³, tp = 1x10-6 s, and Tn =
0.5x10-6 s. (a) Calculate the theoretical saturation current density at 300 K. (b) Calculate the
forward and reverse current density at +/- 0.5 V.
(a) Js =
(units=
(b) J(V=-0.5 V) =.
J(V=+0.5 V) =
_(units=
_(units=
Transcribed Image Text:An ideal silicon p-n junction has N₂ = 1 x 10¹6 cm³, N₁ = 2 x 10¹6 cm³, tp = 1x10-6 s, and Tn = 0.5x10-6 s. (a) Calculate the theoretical saturation current density at 300 K. (b) Calculate the forward and reverse current density at +/- 0.5 V. (a) Js = (units= (b) J(V=-0.5 V) =. J(V=+0.5 V) = _(units= _(units=
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