A silicon pn junction at T = 300 K is doped with impurity concentrations of Na = 1.2 x 1014 em-3 and N, = 2 x 104 cm-3, The thermal equilibrium hole concentration is found to be po = 1.1 x 10" cm-3. The junction is forward biased at V. = 0.65 V. Consider the thermal voltage V, = 25 mV, resistivity of the n-eide is 40 2-em and of the p-side is 20 2-cm, and assume complete ionization. (i) ( (ii) (ii (iv) (v) Determine the intrinsic carrier concentration. Determine the thermal equilibrium electron concentration. Determine the hole mobility in the p-region and the electron mobility in the n-region. Determine the depletion region width. Determine r, and 2, that are shown in Figure 1.

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Hall Effect Sensors

The hall effect sensor is an electronic device designed to detect the effect of the hall, and converts its findings into electronic data, or opening and closing the circuit, providing a magnetic field measurement, processed by an embedded computer or displayed on a visual connector.