A silicon pn junction at T = 300 K is doped with impurity concentrations of Na = 1.2 x 1014 em-3 and N, = 2 x 104 cm-3, The thermal equilibrium hole concentration is found to be po = 1.1 x 10" cm-3. The junction is forward biased at V. = 0.65 V. Consider the thermal voltage V, = 25 mV, resistivity of the n-eide is 40 2-em and of the p-side is 20 2-cm, and assume complete ionization. (i) ( (ii) (ii (iv) (v) Determine the intrinsic carrier concentration. Determine the thermal equilibrium electron concentration. Determine the hole mobility in the p-region and the electron mobility in the n-region. Determine the depletion region width. Determine r, and 2, that are shown in Figure 1.

A silicon pn junction at T = 300 K is doped with impurity concentrations of Na = 1.2 x 1014 em-3 and N, = 2 x 104 cm-3, The thermal equilibrium hole concentration is found to be po = 1.1 x 10" cm-3. The junction is forward biased at V. = 0.65 V. Consider the thermal voltage V, = 25 mV, resistivity of the n-eide is 40 2-em and of the p-side is 20 2-cm, and assume complete ionization. (i) ( (ii) (ii (iv) (v) Determine the intrinsic carrier concentration. Determine the thermal equilibrium electron concentration. Determine the hole mobility in the p-region and the electron mobility in the n-region. Determine the depletion region width. Determine r, and 2, that are shown in Figure 1.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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