(a) The electric conductivity (o) of a semiconductor is given by o = e(nµe + pun), where e is the electron charge, n is the electron concentration, p is the hole concentration, ule is the electron mobility, and u, is the hole mobility. Calculate n in terms of intrinsic carrier concentration n;, where an n-type silicon (Si) has a minimum o. Then, calculate the corresponding maximum electric resistivity of the sample.

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(a) The electric conductivity (o) of a semiconductor is given by o =
the electron charge, n is the electron concentration, p is the hole concentration, le is the electron
mobility, and u is the hole mobility. Calculate n in terms of intrinsic carrier concentration n;,
where an n-type silicon (Si) has a minimum o. Then, calculate the corresponding maximum
electric resistivity of the sample.
(b) A Si wafer (n = 1.45x1010 cm3) has been doped with 1018 cm3 arsenic (As, n-type dopant)
atoms and 9x1017 cm3 boron atoms (B, p-type dopant). Calculate o of the sample at 300 K,
given le - 700 cm?V-ls. Where is the Fermi level (Er) of the doped Si with respect to that of
the intrinsic Si?
e(nue + pun), where e is
Transcribed Image Text:(a) The electric conductivity (o) of a semiconductor is given by o = the electron charge, n is the electron concentration, p is the hole concentration, le is the electron mobility, and u is the hole mobility. Calculate n in terms of intrinsic carrier concentration n;, where an n-type silicon (Si) has a minimum o. Then, calculate the corresponding maximum electric resistivity of the sample. (b) A Si wafer (n = 1.45x1010 cm3) has been doped with 1018 cm3 arsenic (As, n-type dopant) atoms and 9x1017 cm3 boron atoms (B, p-type dopant). Calculate o of the sample at 300 K, given le - 700 cm?V-ls. Where is the Fermi level (Er) of the doped Si with respect to that of the intrinsic Si? e(nue + pun), where e is
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