In an n type semiconductor at T 300 K, the electron concentration varies linearly from 1017 to 3 x 1016 cm3 over a distance of 0.72 cm. Calculate the diffusion current density if the electron diffusion coefficient is 268 cm2/s. An electric field of 137 V/cm is applied across an n type semiconductor sample and the minority carriers are being injected to the sample at a point. The field moves these carriers a distance of 0.4 cm in 10 us. find the drift velocity and the diffusivity of the minority carriers

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In an n
type semiconductor at T 300 K, the electron concentration varies linearly from
1017 to 3 x 1016 cm3 over a distance of 0.72 cm. Calculate the diffusion current density if
the electron diffusion coefficient is 268 cm2/s.
An electric field of 137 V/cm is applied across an n type semiconductor sample and the
minority carriers are being injected to the sample at a point. The field moves these carriers
a distance of 0.4 cm in 10 us. find the drift velocity and the diffusivity of the minority
carriers
Transcribed Image Text:In an n type semiconductor at T 300 K, the electron concentration varies linearly from 1017 to 3 x 1016 cm3 over a distance of 0.72 cm. Calculate the diffusion current density if the electron diffusion coefficient is 268 cm2/s. An electric field of 137 V/cm is applied across an n type semiconductor sample and the minority carriers are being injected to the sample at a point. The field moves these carriers a distance of 0.4 cm in 10 us. find the drift velocity and the diffusivity of the minority carriers
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