1. An n-type Si sample has a resistivity of 5 2-cm and a mobility of 1350 cm?/V.s at T= 300 K. The n-type silicon is the shape of rectangular bar with cross-sectional area of 100 um with length of 0.1 cm. Determine the a) donor impurity concentration, b) the current if applied voltage is 5 V and c) its drift velocity.
1. An n-type Si sample has a resistivity of 5 2-cm and a mobility of 1350 cm?/V.s at T= 300 K. The n-type silicon is the shape of rectangular bar with cross-sectional area of 100 um with length of 0.1 cm. Determine the a) donor impurity concentration, b) the current if applied voltage is 5 V and c) its drift velocity.
Introductory Circuit Analysis (13th Edition)
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![1. An n-type Si sample has a resistivity of 5 Q-cm and a
mobility
of
1350
cm?/V.s
at
T= 300 K. The n-type silicon is the shape of rectangular
bar with cross-sectional area of 100 um with length of
0.1 cm. Determine the a) donor impurity concentration,
b) the current if applied voltage is 5 V and c) its drift
velocity.
2. Consider a semiconductor that is uniformly doped with
Na = 1014 cm 3 and Ng =0, with an applied electric field
%!
of E = 100 V/cm. Assume that u, = 1000 cm2/Vs and u,
%3D
= 0. Also assume the following parameters: No =2 x
cm,
101°(T/300)3/2
Ny = 2 x 1019(T/300)3/2, Eg = 1.10 eV. Calculate the
%3D
electric current density at T= 100, 200, 300, 500 and
600. Plot J vs T.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fbaf1503d-e7c3-4016-b086-a4363010a47b%2F8636ae67-512e-4ecd-a8b4-23942c51b91b%2Fvl9c2he_processed.jpeg&w=3840&q=75)
Transcribed Image Text:1. An n-type Si sample has a resistivity of 5 Q-cm and a
mobility
of
1350
cm?/V.s
at
T= 300 K. The n-type silicon is the shape of rectangular
bar with cross-sectional area of 100 um with length of
0.1 cm. Determine the a) donor impurity concentration,
b) the current if applied voltage is 5 V and c) its drift
velocity.
2. Consider a semiconductor that is uniformly doped with
Na = 1014 cm 3 and Ng =0, with an applied electric field
%!
of E = 100 V/cm. Assume that u, = 1000 cm2/Vs and u,
%3D
= 0. Also assume the following parameters: No =2 x
cm,
101°(T/300)3/2
Ny = 2 x 1019(T/300)3/2, Eg = 1.10 eV. Calculate the
%3D
electric current density at T= 100, 200, 300, 500 and
600. Plot J vs T.
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