9. If a 125 mm diameter wafer is exposed for 1 minute to an air stream under a laminar-flow condition at 30m/min, how many dust particles will land on the wafer in a class-10 clean room? For a class-10 clean room,there are 350 particles (0.5 µm or larger) per cubic meter.10. The killing defect density is responsible for yield loss and depends on the design rule or size of the device on achip. This is because when the design rule becomes smaller, a smaller particle can contribute to yield loss. Fora 16M DRAM chip, the design rule is 0.5 µm, the chip size is 1.4 cm², and the killing defect size is 0.18 µm.Due to contamination that occurs in a cleanroom, the wafer defect density measured at size 0.3 µm increasesfivefold from 0.2 D/cm² to 1.0 D/cm². Using the relationship Y = e-DA where D is the defect density and A isthe chip area, calculate the yield loss of a 16M DRAM wafer due to the increase in the defect density assumingthat the defect density is roughly inversely proportional to the defect size to the second power. 7. Arsenic was pre-deposited by arsine gas, and the resulting total amount of dopant per unit area was 1×10¹4atoms/cm². How long would it take to drive the arsenic into a junction depth of 1 µm? Assume a backgrounddoping of CB = 1×10¹5 atoms/cm³ and a drive-in temperature of 1200°C. For As diffusion, Do = 24 cm²/s, andEa = 4.08 eV.8. Assume 100 keV boron implants on a 200 mm silicon wafer at a dose of 5×10¹4 ions/cm². The projected rangeand projected straggle (op) are 0.31 and 0.07 μm, respectively. Calculate the peak concentration and the requiredion-beam current for 1 min of implantation.

Answered: Image /qna-images/answer/1dfc7fb0-376b-40c4-982e-450c2dfea2cf.jpg

7. Arsenic was pre-deposited by arsine gas, and the resulting total amount of dopant per unit area was 1×10¹4 atoms/cm². How long would it take to drive the arsenic into a junction depth of 1 µm? Assume a background doping of CB = 1×10¹5 atoms/cm³ and a drive-in temperature of 1200-C. For As diffusion, Do = 24 cm²/s, and Ea = 4.08 eV.

7. Arsenic was pre-deposited by arsine gas, and the resulting total amount of dopant per unit area was 1×10¹4 atoms/cm². How long would it take to drive the arsenic into a junction depth of 1 µm? Assume a background doping of CB = 1×10¹5 atoms/cm³ and a drive-in temperature of 1200-C. For As diffusion, Do = 24 cm²/s, and Ea = 4.08 eV.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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