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i. A silicon sample is uniformly doped p-type with Na=1015/cm³. At T=0 K, what are the equilibrium electron and hole concentrations?

i. A silicon sample is uniformly doped p-type with Na=1015/cm³. At T=0 K, what are the equilibrium electron and hole concentrations?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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i. A silicon sample is uniformly doped p-type with NA=1015/cm³. At T=0 K, what are the equilibrium electron and hole concentrations? ii. Mark clearly the correct directions of electron and hole flow directions and currents in the presence of an electric field and concentration gradients as shown below. Hole Flow (Diffusion) Hole Flow (Drift) Hole Current (Diffusion) Hole Current (Drift) Electron Flow (Diffusion) Electron Flow (Drift) Electron Current (Diffusion) Electron Current (Drift) E(x) n(x) p(x) An n-type semiconductor sample is continuously and uniformly excited (optically) at ii. low level. Start from the balance between the generation and recombination and find the expression for the steady state excess hole concentration in the sample in terms of gop and Tp. Do not derive this expression using the continuity or diffusion equations. Show complete work.
Transcribed Image Text:i. A silicon sample is uniformly doped p-type with NA=1015/cm³. At T=0 K, what are the equilibrium electron and hole concentrations? ii. Mark clearly the correct directions of electron and hole flow directions and currents in the presence of an electric field and concentration gradients as shown below. Hole Flow (Diffusion) Hole Flow (Drift) Hole Current (Diffusion) Hole Current (Drift) Electron Flow (Diffusion) Electron Flow (Drift) Electron Current (Diffusion) Electron Current (Drift) E(x) n(x) p(x) An n-type semiconductor sample is continuously and uniformly excited (optically) at ii. low level. Start from the balance between the generation and recombination and find the expression for the steady state excess hole concentration in the sample in terms of gop and Tp. Do not derive this expression using the continuity or diffusion equations. Show complete work.
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