5.10 Consider a CMOS process for which L = 0.25 um, L=6 nm, A, = 460 cm?V-s, and V,= 0.5 v. (a) Find C, and k (b) For an NMOS transistor with W/L= 15 um/0.25 um, calculate the values of V, the transistor in the saturation region with a de current I,=0.8 mA. V, and V needed to operate (c) For the device in (b), find the value of Vay and V required to cause the device to operate as a 500-2 resistor for very small Veg

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5.10 Consider a CMOS process for which L = 0.25 um,
L=6 nm, A, = 460 cm?/V-s, and V, = 0.5 v.
(a) Find C and
(b) For an NMOS transistor with W/L= 15 um/0.25 um,
calculate the values of V, Vey and Vise needed to operate
the transistor in the saturation region with a de current /, =0.8
mA.
(c) For the device in (b), find the value of Vay and V
required to cause the device to operate as a 500-2 resistor
for very small Vgg
Transcribed Image Text:5.10 Consider a CMOS process for which L = 0.25 um, L=6 nm, A, = 460 cm?/V-s, and V, = 0.5 v. (a) Find C and (b) For an NMOS transistor with W/L= 15 um/0.25 um, calculate the values of V, Vey and Vise needed to operate the transistor in the saturation region with a de current /, =0.8 mA. (c) For the device in (b), find the value of Vay and V required to cause the device to operate as a 500-2 resistor for very small Vgg
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