An NMOS transistor has a threshold VT of 0.5 V when its source-to-substrate voltage is zero, given that the substrate is uniformly doped at 2E17 acceptor dopant atm/cm3³ and the gate oxide capacitance is 3.5 fF/um?. a. Determine an expression for the threshold voltage as a function of source-to-substrate voltage. b. It is desired to obtain a threshold voltage of 1.0 volt at 0 volts source potential (with respect to ground). One method suggested by engineering team is to provide a separate bias supply for the substrate, in order to increase the source-to-substrate voltage. What value of Vx supply is needed? c. Rather than use of a separate substrate bias generator, another group in engineering is suggesting to use a threshold adjustment implant is the fabrication. Assuming the implant acts as a sheet charge in the oxide- silicon interface (via the term Qrc), what dose is needed to obtain VTN=1 volt at VsB=0? Would you use acceptor (NA) or donor (ND) atoms?

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An NMOS transistor has a threshold VT of 0.5 V when its source-to-substrate
voltage is zero, given that the substrate is uniformly doped at 2E17 acceptor
dopant atm/cm³ and the gate oxide capacitance is 3.5 fF/um?.
1.
a. Determine an expression for the threshold voltage as a function of
source-to-substrate voltage.
b. It is desired to obtain a threshold voltage of 1.0 volt at 0 volts source
potential (with respect to ground). One method suggested by engineering
team is to provide a separate bias supply for the substrate, in order to
increase the source-to-substrate voltage. What value of Vx supply is
needed?
c. Rather than use of a separate substrate bias generator, another group in
engineering is suggesting to use a threshold adjustment implant is the
fabrication. Assuming the implant acts as a sheet charge in the oxide-
silicon interface (via the term Qfc), what dose is needed to obtain VTN=1
volt at VsB=0? Would you use acceptor (NA) or donor (ND) atoms?
Transcribed Image Text:An NMOS transistor has a threshold VT of 0.5 V when its source-to-substrate voltage is zero, given that the substrate is uniformly doped at 2E17 acceptor dopant atm/cm³ and the gate oxide capacitance is 3.5 fF/um?. 1. a. Determine an expression for the threshold voltage as a function of source-to-substrate voltage. b. It is desired to obtain a threshold voltage of 1.0 volt at 0 volts source potential (with respect to ground). One method suggested by engineering team is to provide a separate bias supply for the substrate, in order to increase the source-to-substrate voltage. What value of Vx supply is needed? c. Rather than use of a separate substrate bias generator, another group in engineering is suggesting to use a threshold adjustment implant is the fabrication. Assuming the implant acts as a sheet charge in the oxide- silicon interface (via the term Qfc), what dose is needed to obtain VTN=1 volt at VsB=0? Would you use acceptor (NA) or donor (ND) atoms?
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