5.) A particular Si device needs an implant of P with a peak at a depth of 1300 Å and a peak concentration of 10¹7 cm-3. From this data, the straggle (ARp) is expected to be 350 Å. a.) Determine the dose that should be used for this process. (Ans. ~ 10¹4) b.) Determine the surface concentration. (Ans. ~ 10¹5) c.) Find the as-implanted junction depth if the substrate is p-type with a concentration of 10¹5 cm-³ B atoms. (Note: there will be 2 roots - negative roots are impossible and incredibly small nm-width values aren't the "true" depth to be considered).
5.) A particular Si device needs an implant of P with a peak at a depth of 1300 Å and a peak concentration of 10¹7 cm-3. From this data, the straggle (ARp) is expected to be 350 Å. a.) Determine the dose that should be used for this process. (Ans. ~ 10¹4) b.) Determine the surface concentration. (Ans. ~ 10¹5) c.) Find the as-implanted junction depth if the substrate is p-type with a concentration of 10¹5 cm-³ B atoms. (Note: there will be 2 roots - negative roots are impossible and incredibly small nm-width values aren't the "true" depth to be considered).
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Transcribed Image Text:5.) A particular Si device needs an implant of P with a peak at a depth of 1300 Å and a peak
concentration of 10¹7 cm-³. From this data, the straggle (ARp) is expected to be 350 Å.
a.) Determine the dose that should be used for this process. (Ans. ~ 10¹4)
b.) Determine the surface concentration. (Ans. ~ 10¹5)
c.) Find the as-implanted junction depth if the substrate is p-type with a concentration of
10¹5 cm-³ B atoms. (Note: there will be 2 roots - negative roots are impossible and incredibly
small nm-width values aren't the "true" depth to be considered).
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