Refer to the generic FET figure for this problem. And choose the correct answer inside the parenthesis  (a) If the substrate doping is NA = 5 x 1016 cm-3, the basic structure is (CMOS, PMOS, NMOS, JFET, MESFET) and the inverted channel charge carriers are (HOLES, ELECTRONS, BOTH HOLES AND ELECTRONS, NEUTRONS, PHOTONS). (b) If the substrate doping is changed to be ND = 5 x 1016 cm- 3, the basic structure is (CMOS, PMOS, NMOS, JFET, MESFET) and the inverted channel charge carriers are (HOLES, ELECTRONS, BOTH HOLES AND ELECTRONS, NEUTRONS, PHOTONS) (c) Assume L = 50 nm, W = 500 nm, tox = 200 Å. Units are important!!!!!! Compute Cox and Compute CTotal

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 Refer to the generic FET figure for this problem. And choose the correct answer inside the parenthesis 
(a) If the substrate doping is NA = 5 x 1016 cm-3, the basic
structure is (CMOS, PMOS, NMOS, JFET, MESFET) and the inverted
channel charge carriers are (HOLES, ELECTRONS, BOTH HOLES
AND ELECTRONS, NEUTRONS, PHOTONS).
(b) If the substrate doping is changed to be ND = 5 x 1016 cm-
3, the basic structure is (CMOS, PMOS, NMOS, JFET, MESFET) and
the inverted channel charge carriers are (HOLES, ELECTRONS, BOTH
HOLES AND ELECTRONS, NEUTRONS, PHOTONS)
(c) Assume L = 50 nm, W = 500 nm, tox = 200 Å. Units are important!!!!!!
Compute Cox and Compute CTotal 

for polysilicon) Silicon dioxide
(SiO,)
Metal
Channel region
p-type substrate
(bady)
Source
region
Drain
region
Transcribed Image Text:for polysilicon) Silicon dioxide (SiO,) Metal Channel region p-type substrate (bady) Source region Drain region
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Step 1

Given the internal structure of FET:

a) If the substrate doping is NA = 5 x 1016 cm-3, then we need to find what is the basic structure out of the options( (CMOS, PMOS, NMOS, JFET, MESFET) and also we need to find the inverted channel charge carrier out of the options(HOLES, ELECTRONS, BOTH HOLES AND ELECTRONS, NEUTRONS, PHOTONS).

b)  If the substrate doping is changed to be ND = 5 x 1016 cm-3, then we need to find what is the basic structure out of the options( (CMOS, PMOS, NMOS, JFET, MESFET) and also we need to find the inverted channel charge carrier out of the options(HOLES, ELECTRONS, BOTH HOLES AND ELECTRONS, NEUTRONS, PHOTONS).

c) Assuming L = 50 nm, W = 500 nm, tox = 200 Å. We need to compute Cox and CTotal.

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